File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Study of semi-insulating LEC InP in China

TitleStudy of semi-insulating LEC InP in China
Authors
Issue Date2002
Citation
Conference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 509-512 How to Cite?
AbstractThe thermally induced defects in semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP was studied. The undoped n-type high purity LEC-InP became semi-insualting when it was annealed between 800 °C and 900 °C in vacuum. The results showed that the different annealing durations caused different defect in the materials.
Persistent Identifierhttp://hdl.handle.net/10722/176164
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorSun, Nen_HK
dc.contributor.authorWu, Xen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorShen, Nen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorPu, Cen_HK
dc.contributor.authorBi, Ken_HK
dc.contributor.authorYang, Gen_HK
dc.contributor.authorXu, Yen_HK
dc.contributor.authorYang, Ken_HK
dc.contributor.authorZhao, Zen_HK
dc.contributor.authorSun, Ten_HK
dc.contributor.authorGuo, Wen_HK
dc.contributor.authorLin, Len_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorZhao, Qen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T09:06:33Z-
dc.date.available2012-11-26T09:06:33Z-
dc.date.issued2002en_HK
dc.identifier.citationConference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 509-512en_US
dc.identifier.issn1092-8669en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176164-
dc.description.abstractThe thermally induced defects in semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP was studied. The undoped n-type high purity LEC-InP became semi-insualting when it was annealed between 800 °C and 900 °C in vacuum. The results showed that the different annealing durations caused different defect in the materials.en_HK
dc.languageengen_US
dc.relation.ispartofConference Proceedings - International Conference on Indium Phosphide and Related Materialsen_HK
dc.titleStudy of semi-insulating LEC InP in Chinaen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0036055848en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036055848&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage509en_HK
dc.identifier.epage512en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSun, N=7202556986en_HK
dc.identifier.scopusauthoridWu, X=7407063392en_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridShen, N=7102785740en_HK
dc.identifier.scopusauthoridChen, X=26642908200en_HK
dc.identifier.scopusauthoridPu, C=55419723900en_HK
dc.identifier.scopusauthoridBi, K=7004436355en_HK
dc.identifier.scopusauthoridYang, G=8693019600en_HK
dc.identifier.scopusauthoridXu, Y=37035703100en_HK
dc.identifier.scopusauthoridYang, K=14326327100en_HK
dc.identifier.scopusauthoridZhao, Z=7404148480en_HK
dc.identifier.scopusauthoridSun, T=7402922751en_HK
dc.identifier.scopusauthoridGuo, W=7401967706en_HK
dc.identifier.scopusauthoridLin, L=7404131111en_HK
dc.identifier.scopusauthoridWang, L=7409177288en_HK
dc.identifier.scopusauthoridZhao, Q=55479203400en_HK
dc.identifier.scopusauthoridHuang, Y=23977949200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats