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Conference Paper: Effects of rapid thermal annealing on the intersubband energy spacing of self-assembled InAs/GaAs quantum dots

TitleEffects of rapid thermal annealing on the intersubband energy spacing of self-assembled InAs/GaAs quantum dots
Authors
Issue Date2000
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2000, v. 588, p. 269-275 How to Cite?
AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.
Persistent Identifierhttp://hdl.handle.net/10722/176159
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWang, XCen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorZhang, ZHen_US
dc.date.accessioned2012-11-26T09:06:30Z-
dc.date.available2012-11-26T09:06:30Z-
dc.date.issued2000en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2000, v. 588, p. 269-275en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/176159-
dc.description.abstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleEffects of rapid thermal annealing on the intersubband energy spacing of self-assembled InAs/GaAs quantum dotsen_US
dc.typeConference_Paperen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033714720en_US
dc.identifier.volume588en_US
dc.identifier.spage269en_US
dc.identifier.epage275en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridZhang, ZH=8241791600en_US

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