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Article: Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

TitleSpectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide
Authors
Issue Date1989
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1989, v. 66 n. 8, p. 3772-3786 How to Cite?
AbstractThe incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.
Persistent Identifierhttp://hdl.handle.net/10722/175544
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, Ben_US
dc.contributor.authorArai, Ken_US
dc.contributor.authorSkromme, BJen_US
dc.contributor.authorBose, SSen_US
dc.contributor.authorRoth, TJen_US
dc.contributor.authorAguilar, JAen_US
dc.contributor.authorLepkowski, TRen_US
dc.contributor.authorTien, NCen_US
dc.contributor.authorStillman, GEen_US
dc.date.accessioned2012-11-26T08:59:27Z-
dc.date.available2012-11-26T08:59:27Z-
dc.date.issued1989en_US
dc.identifier.citationJournal Of Applied Physics, 1989, v. 66 n. 8, p. 3772-3786en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/175544-
dc.description.abstractThe incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleSpectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenideen_US
dc.typeArticleen_US
dc.identifier.emailTien, NC: nctien@hku.hken_US
dc.identifier.authorityTien, NC=rp01604en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.344040en_US
dc.identifier.scopuseid_2-s2.0-36549097491en_US
dc.identifier.volume66en_US
dc.identifier.issue8en_US
dc.identifier.spage3772en_US
dc.identifier.epage3786en_US
dc.identifier.isiWOS:A1989AW23200058-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLee, B=35345072100en_US
dc.identifier.scopusauthoridArai, K=54583102600en_US
dc.identifier.scopusauthoridSkromme, BJ=7004915574en_US
dc.identifier.scopusauthoridBose, SS=23020640300en_US
dc.identifier.scopusauthoridRoth, TJ=7202625726en_US
dc.identifier.scopusauthoridAguilar, JA=36130974500en_US
dc.identifier.scopusauthoridLepkowski, TR=6602649490en_US
dc.identifier.scopusauthoridTien, NC=7006532826en_US
dc.identifier.scopusauthoridStillman, GE=7007111574en_US

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