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Article: Depletion corrections in variable temperature Hall measurements

TitleDepletion corrections in variable temperature Hall measurements
Authors
Issue Date1987
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1987, v. 61 n. 10, p. 4808-4811 How to Cite?
AbstractThe decrease in the measured Hall free-electron concentration with decreasing temperature near 300 K is often observed for thin high-purity GaAs layers. This has previously been interpreted as electron freezeout on deep donor sites. However, it can be quantitatively described by the decrease in carrier concentration per unit area associated with increasing surface and interface depletion region thicknesses. It is shown that when these depletion regions are included in the analysis of the Hall-effect data, the measured free-electron freezeout behavior can be accurately described by a simple shallow donor. If necessary, a deep donor may be included in the modeling. The results agree with the observed temperature variation of the capacitance-voltage (C-V) profiling data.
Persistent Identifierhttp://hdl.handle.net/10722/175543
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLepkowski, TRen_US
dc.contributor.authorDejule, RYen_US
dc.contributor.authorTien, NCen_US
dc.contributor.authorKim, MHen_US
dc.contributor.authorStillman, GEen_US
dc.date.accessioned2012-11-26T08:59:26Z-
dc.date.available2012-11-26T08:59:26Z-
dc.date.issued1987en_US
dc.identifier.citationJournal Of Applied Physics, 1987, v. 61 n. 10, p. 4808-4811en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/175543-
dc.description.abstractThe decrease in the measured Hall free-electron concentration with decreasing temperature near 300 K is often observed for thin high-purity GaAs layers. This has previously been interpreted as electron freezeout on deep donor sites. However, it can be quantitatively described by the decrease in carrier concentration per unit area associated with increasing surface and interface depletion region thicknesses. It is shown that when these depletion regions are included in the analysis of the Hall-effect data, the measured free-electron freezeout behavior can be accurately described by a simple shallow donor. If necessary, a deep donor may be included in the modeling. The results agree with the observed temperature variation of the capacitance-voltage (C-V) profiling data.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleDepletion corrections in variable temperature Hall measurementsen_US
dc.typeArticleen_US
dc.identifier.emailTien, NC: nctien@hku.hken_US
dc.identifier.authorityTien, NC=rp01604en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.338343en_US
dc.identifier.scopuseid_2-s2.0-0000419991en_US
dc.identifier.volume61en_US
dc.identifier.issue10en_US
dc.identifier.spage4808en_US
dc.identifier.epage4811en_US
dc.identifier.isiWOS:A1987H386600016-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLepkowski, TR=6602649490en_US
dc.identifier.scopusauthoridDejule, RY=7004204029en_US
dc.identifier.scopusauthoridTien, NC=7006532826en_US
dc.identifier.scopusauthoridKim, MH=34770434400en_US
dc.identifier.scopusauthoridStillman, GE=7007111574en_US

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