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Article: Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

TitleIntrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
Authors
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2012, v. 86 n. 16, article no. 165108 How to Cite?
AbstractUsing first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX 2 (M=Mo,W and X=S,Se). MX 2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley-Hall and a spin-Hall effect. We also show that the intrinsic spin Hall conductivity in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics. © 2012 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175226
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFeng, Wen_US
dc.contributor.authorYao, Yen_US
dc.contributor.authorZhu, Wen_US
dc.contributor.authorZhou, Jen_US
dc.contributor.authorYao, Wen_US
dc.contributor.authorXiao, Den_US
dc.date.accessioned2012-11-26T08:55:00Z-
dc.date.available2012-11-26T08:55:00Z-
dc.date.issued2012en_US
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2012, v. 86 n. 16, article no. 165108en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://hdl.handle.net/10722/175226-
dc.description.abstractUsing first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX 2 (M=Mo,W and X=S,Se). MX 2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley-Hall and a spin-Hall effect. We also show that the intrinsic spin Hall conductivity in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics. © 2012 American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rightsPhysical Review B. Copyright © American Physical Society.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleIntrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles studyen_US
dc.typeArticleen_US
dc.identifier.emailYao, W: wangyao@hku.hken_US
dc.identifier.authorityYao, W=rp00827en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1103/PhysRevB.86.165108en_US
dc.identifier.scopuseid_2-s2.0-84867444488en_US
dc.identifier.hkuros213441-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84867444488&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume86en_US
dc.identifier.issue16en_US
dc.identifier.isiWOS:000309580000003-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFeng, W=36092816600en_US
dc.identifier.scopusauthoridYao, Y=9241909200en_US
dc.identifier.scopusauthoridZhu, W=8378212900en_US
dc.identifier.scopusauthoridZhou, J=55210331300en_US
dc.identifier.scopusauthoridYao, W=35141935300en_US
dc.identifier.scopusauthoridXiao, D=35249533800en_US
dc.identifier.citeulike11223371-

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