File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

TitleMicrostructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires
Authors
KeywordsGallium Nitride
Gallium Oxide
Nanowires
Nitridation
Issue Date2012
PublisherElsevier Inc. The Journal's web site is located at http://www.elsevier.com/locate/matchar
Citation
Materials Characterization, 2012, v. 73, p. 153-157 How to Cite?
AbstractHere we present a detailed study on nitridation and structure transition in monoclinic gallium oxide (β-Ga 2O 3) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga 2O 3 nanowires in the gas of ammonia results in rich substructures including the Ga 2O 3 phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. © 2012 Elsevier Inc.
Persistent Identifierhttp://hdl.handle.net/10722/175224
ISSN
2015 Impact Factor: 2.383
2015 SCImago Journal Rankings: 1.267
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNing, JQen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, PWen_US
dc.contributor.authorSong, YPen_US
dc.contributor.authorYu, DPen_US
dc.contributor.authorShan, YYen_US
dc.contributor.authorLee, STen_US
dc.contributor.authorYang, Hen_US
dc.date.accessioned2012-11-26T08:54:59Z-
dc.date.available2012-11-26T08:54:59Z-
dc.date.issued2012en_US
dc.identifier.citationMaterials Characterization, 2012, v. 73, p. 153-157en_US
dc.identifier.issn1044-5803en_US
dc.identifier.urihttp://hdl.handle.net/10722/175224-
dc.description.abstractHere we present a detailed study on nitridation and structure transition in monoclinic gallium oxide (β-Ga 2O 3) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga 2O 3 nanowires in the gas of ammonia results in rich substructures including the Ga 2O 3 phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. © 2012 Elsevier Inc.en_US
dc.languageengen_US
dc.publisherElsevier Inc. The Journal's web site is located at http://www.elsevier.com/locate/matcharen_US
dc.relation.ispartofMaterials Characterizationen_US
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Materials Characterization. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Characterization, [VOL 73, 2012] DOI 10.1016/j.matchar.2012.08.013-
dc.subjectGallium Nitrideen_US
dc.subjectGallium Oxideen_US
dc.subjectNanowiresen_US
dc.subjectNitridationen_US
dc.titleMicrostructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowiresen_US
dc.typeArticleen_US
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityNing, JQ=rp00769en_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.matchar.2012.08.013en_US
dc.identifier.scopuseid_2-s2.0-84867228277en_US
dc.identifier.hkuros212510-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84867228277&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume73en_US
dc.identifier.spage153en_US
dc.identifier.epage157en_US
dc.identifier.isiWOS:000310423400020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridNing, JQ=15845992800en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, PW=14009097900en_US
dc.identifier.scopusauthoridSong, YP=55355193700en_US
dc.identifier.scopusauthoridYu, DP=55355589900en_US
dc.identifier.scopusauthoridShan, YY=55355200500en_US
dc.identifier.scopusauthoridLee, ST=36627430600en_US
dc.identifier.scopusauthoridYang, H=35747496600en_US
dc.identifier.citeulike11797144-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats