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Article: Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

TitleModulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy
Authors
KeywordsAlGaN/GaN
Enhancement mode
Fluorine
Polarization field
Positron annihilation
Issue Date2010
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (A) Applications And Materials Science, 2010, v. 207 n. 6, p. 1332-1334 How to Cite?
AbstractModulations of energy band and polarization field by fluorine ions in fluorine plasma treated AlGaN/GaN heterostructures were revealed by positron annihilation spectroscopy (PAS). It is found that the annihilation probability is mainly governed by the electric field in the AlGaN/GaN heterostructure, which could be modulated by charged ions, opposite to what was first expected from the large number of plasma-induced defects such as Ga-vacancies. The modulation of electric field is successfully observed through the opposite changes in the S parameters on the two sides of the hetero-interface after fluorine plasma treatment due to the opposite E-field directions. Fluorine is experimentally proved to be negatively charged in GaN related materials, which is consistent with the operation principle of enhancement-mode AlGaN/GaN HEMT fabricated by fluorine plasma treatment. It is also suggested that PAS is a useful tool to probe the intrinsic electric field in AlGaN/GaN system. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/175176
ISSN
2015 Impact Factor: 1.648
2015 SCImago Journal Rankings: 0.712
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Men_HK
dc.contributor.authorCheng, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorChen, KJen_HK
dc.date.accessioned2012-11-26T08:49:38Z-
dc.date.available2012-11-26T08:49:38Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysica Status Solidi (A) Applications And Materials Science, 2010, v. 207 n. 6, p. 1332-1334en_HK
dc.identifier.issn1862-6300en_HK
dc.identifier.urihttp://hdl.handle.net/10722/175176-
dc.description.abstractModulations of energy band and polarization field by fluorine ions in fluorine plasma treated AlGaN/GaN heterostructures were revealed by positron annihilation spectroscopy (PAS). It is found that the annihilation probability is mainly governed by the electric field in the AlGaN/GaN heterostructure, which could be modulated by charged ions, opposite to what was first expected from the large number of plasma-induced defects such as Ga-vacancies. The modulation of electric field is successfully observed through the opposite changes in the S parameters on the two sides of the hetero-interface after fluorine plasma treatment due to the opposite E-field directions. Fluorine is experimentally proved to be negatively charged in GaN related materials, which is consistent with the operation principle of enhancement-mode AlGaN/GaN HEMT fabricated by fluorine plasma treatment. It is also suggested that PAS is a useful tool to probe the intrinsic electric field in AlGaN/GaN system. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Scienceen_HK
dc.subjectAlGaN/GaNen_HK
dc.subjectEnhancement modeen_HK
dc.subjectFluorineen_HK
dc.subjectPolarization fielden_HK
dc.subjectPositron annihilationen_HK
dc.titleModulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssa.200983463en_HK
dc.identifier.scopuseid_2-s2.0-77954294814en_HK
dc.identifier.hkuros242069-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954294814&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume207en_HK
dc.identifier.issue6en_HK
dc.identifier.spage1332en_HK
dc.identifier.epage1334en_HK
dc.identifier.isiWOS:000279989000014-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridWang, M=13104393900en_HK
dc.identifier.scopusauthoridCheng, CC=23003304100en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridChen, KJ=10142978900en_HK

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