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Article: Evolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealing

TitleEvolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealing
Authors
KeywordsOptical Properties
Photoluminescence
Si Ion Implantation
Si Nanocrystals
Issue Date2008
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2008, v. 8 n. 7, p. 3555-3560 How to Cite?
AbstractThe information of band structure of silicon nanocrystal (nc-Si) embedded in SiO 2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100°C yields the strongest PL band at 760 nm (∼1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si-O vibration of the nc-Si/SiO 2 interface with the stretching frequency of ∼1083 cm -1 (∼0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers. Copyright © 2008 American Scientific Publishers All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/175154
ISSN
2015 Impact Factor: 1.338
2015 SCImago Journal Rankings: 0.358
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorNg, CYen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorWong, JIen_US
dc.contributor.authorZhu, FRen_US
dc.contributor.authorTan, MCen_US
dc.contributor.authorFung, Sen_US
dc.contributor.authorChen, XDen_US
dc.contributor.authorHuang, Yen_US
dc.date.accessioned2012-11-26T08:49:27Z-
dc.date.available2012-11-26T08:49:27Z-
dc.date.issued2008en_US
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2008, v. 8 n. 7, p. 3555-3560en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://hdl.handle.net/10722/175154-
dc.description.abstractThe information of band structure of silicon nanocrystal (nc-Si) embedded in SiO 2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100°C yields the strongest PL band at 760 nm (∼1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si-O vibration of the nc-Si/SiO 2 interface with the stretching frequency of ∼1083 cm -1 (∼0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers. Copyright © 2008 American Scientific Publishers All rights reserved.en_US
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_US
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_US
dc.subjectOptical Propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSi Ion Implantationen_US
dc.subjectSi Nanocrystalsen_US
dc.titleEvolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealingen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1166/jnn.2008.128en_US
dc.identifier.pmid19051910-
dc.identifier.scopuseid_2-s2.0-55849119250en_US
dc.identifier.hkuros148716-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-55849119250&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8en_US
dc.identifier.issue7en_US
dc.identifier.spage3555en_US
dc.identifier.epage3560en_US
dc.identifier.isiWOS:000260776600038-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDing, L=21233704100en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridNg, CY=8604409400en_US
dc.identifier.scopusauthoridYang, M=24464683100en_US
dc.identifier.scopusauthoridWong, JI=15123438200en_US
dc.identifier.scopusauthoridZhu, FR=7202254675en_US
dc.identifier.scopusauthoridTan, MC=16041148100en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridChen, XD=26642908200en_US
dc.identifier.scopusauthoridHuang, Y=26643004400en_US
dc.identifier.citeulike2965288-

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