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Article: Charging effect of Al 2O 3 thin films containing Al nanocrystals

TitleCharging effect of Al 2O 3 thin films containing Al nanocrystals
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 93 n. 14, article no. 142106 How to Cite?
AbstractIn this work, Al 2O 3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/ Al 2O 3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175153
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorZhu, Wen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorCen, ZHen_US
dc.contributor.authorWong, JIen_US
dc.contributor.authorLi, YBen_US
dc.contributor.authorZhang, Sen_US
dc.contributor.authorChen, XBen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:49:27Z-
dc.date.available2012-11-26T08:49:27Z-
dc.date.issued2008en_US
dc.identifier.citationApplied Physics Letters, 2008, v. 93 n. 14, article no. 142106en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/175153-
dc.description.abstractIn this work, Al 2O 3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/ Al 2O 3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al. © 2008 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics-
dc.titleCharging effect of Al 2O 3 thin films containing Al nanocrystalsen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2994695en_US
dc.identifier.scopuseid_2-s2.0-53649107183en_US
dc.identifier.hkuros153692-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-53649107183&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume93en_US
dc.identifier.issue14en_US
dc.identifier.isiWOS:000259965400023-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridZhu, W=7404232937en_US
dc.identifier.scopusauthoridYang, M=24464683100en_US
dc.identifier.scopusauthoridCen, ZH=23098969400en_US
dc.identifier.scopusauthoridWong, JI=15123438200en_US
dc.identifier.scopusauthoridLi, YB=19337392800en_US
dc.identifier.scopusauthoridZhang, S=7409376020en_US
dc.identifier.scopusauthoridChen, XB=25226924100en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US

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