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Article: Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantation

TitleInfluence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantation
Authors
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2007, v. 101 n. 10, p. 103525-1 - 103525-6 How to Cite?
AbstractSi nanocrystals (nc-Si) with different sizes embedded in Si O2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175068
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorWong, JIen_US
dc.contributor.authorLiu, YCen_US
dc.contributor.authorTrigg, ADen_US
dc.contributor.authorZhu, FRen_US
dc.contributor.authorTan, MCen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:49:05Z-
dc.date.available2012-11-26T08:49:05Z-
dc.date.issued2007en_US
dc.identifier.citationJournal Of Applied Physics, 2007, v. 101 n. 10, p. 103525-1 - 103525-6en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/175068-
dc.description.abstractSi nanocrystals (nc-Si) with different sizes embedded in Si O2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement. © 2007 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleInfluence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantationen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.2730560en_US
dc.identifier.scopuseid_2-s2.0-34249873519en_US
dc.identifier.hkuros127316-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249873519&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume101en_US
dc.identifier.issue10en_US
dc.identifier.isiWOS:000246891500045-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDing, L=21233704100en_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridYang, M=24464683100en_US
dc.identifier.scopusauthoridWong, JI=15123438200en_US
dc.identifier.scopusauthoridLiu, YC=36062391300en_US
dc.identifier.scopusauthoridTrigg, AD=8835395900en_US
dc.identifier.scopusauthoridZhu, FR=7202254675en_US
dc.identifier.scopusauthoridTan, MC=16041148100en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US

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