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Article: Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire

TitleResonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 16 How to Cite?
AbstractAt room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175010
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, Hen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorLi, Qen_US
dc.contributor.authorZhang, Jen_US
dc.date.accessioned2012-11-26T08:48:45Z-
dc.date.available2012-11-26T08:48:45Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/175010-
dc.description.abstractAt room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleResonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphireen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2197310en_US
dc.identifier.scopuseid_2-s2.0-33646171364en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646171364&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume88en_US
dc.identifier.issue16en_US
dc.identifier.isiWOS:000236969300013-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, H=35493514000en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridLi, Q=7405861869en_US
dc.identifier.scopusauthoridZhang, J=36067089700en_US

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