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Article: Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

TitleCurrent transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 13 How to Cite?
AbstractRectifying undoped and nitrogen-doped ZnOp-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼ 1019 cm-3) and highly resistive (resistivity ∼ 105 Ω cm), respectively. While forward biasing the undoped- ZnOp-Si, the current follows Ohmic behavior if the applied bias Vforward is larger than ∼0.4 V. However, for the nitrogen-doped- ZnOp-Si sample, the current is Ohmic for Vforward <1.0 V and then transits to J∼ V2 for Vforward >2.5 V. The transport properties of the undoped- ZnOp-Si and the N-doped- ZnOp-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175009
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorMei, YFen_HK
dc.contributor.authorFu, RKYen_HK
dc.contributor.authorSiu, GGen_HK
dc.contributor.authorChu, PKen_HK
dc.date.accessioned2012-11-26T08:48:45Z-
dc.date.available2012-11-26T08:48:45Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 13en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/175009-
dc.description.abstractRectifying undoped and nitrogen-doped ZnOp-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼ 1019 cm-3) and highly resistive (resistivity ∼ 105 Ω cm), respectively. While forward biasing the undoped- ZnOp-Si, the current follows Ohmic behavior if the applied bias Vforward is larger than ∼0.4 V. However, for the nitrogen-doped- ZnOp-Si sample, the current is Ohmic for Vforward <1.0 V and then transits to J∼ V2 for Vforward >2.5 V. The transport properties of the undoped- ZnOp-Si and the N-doped- ZnOp-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively. © 2006 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.titleCurrent transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and depositionen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2190444en_HK
dc.identifier.scopuseid_2-s2.0-33645548058en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645548058&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue13en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000236465100034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridMei, YF=7102674791en_HK
dc.identifier.scopusauthoridFu, RKY=7203054223en_HK
dc.identifier.scopusauthoridSiu, GG=7004584249en_HK
dc.identifier.scopusauthoridChu, PK=36040705700en_HK

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