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Article: Optical investigations of the states in GaP:Ni

TitleOptical investigations of the states in GaP:Ni
Authors
Issue Date1982
Citation
Journal Of Physics C: Solid State Physics, 1982, v. 15 n. 36, p. 7355-7365 How to Cite?
AbstractThis paper reports photoconductivity measurements of semi-insulating Ni-doped GaP materials. The photoresponse spectra obtained exhibit strong onsets at 0.62 eV and 0.95 eV, as well as a number of weaker features. Optical transitions are interpreted as between Ni3+ and Ni2+ ions, and the conduction and valence bands, as well as transitions involving a nickel-related defect. An energy diagram (at 300K) is deduced to consist of an Ni2+ ground state at 0.62 eV above the valence band and three excited states, and a nickel-related level located at 0.95 eV above the valence band. Optical absorption measurements have shown that the Ni+ two-electron trap concentration is negligible in semi-insulating GaP materials and increases appreciably under white light illumination.
Persistent Identifierhttp://hdl.handle.net/10722/174978
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_US
dc.contributor.authorNicholas, RJen_US
dc.date.accessioned2012-11-26T08:48:28Z-
dc.date.available2012-11-26T08:48:28Z-
dc.date.issued1982en_US
dc.identifier.citationJournal Of Physics C: Solid State Physics, 1982, v. 15 n. 36, p. 7355-7365en_US
dc.identifier.issn0022-3719en_US
dc.identifier.urihttp://hdl.handle.net/10722/174978-
dc.description.abstractThis paper reports photoconductivity measurements of semi-insulating Ni-doped GaP materials. The photoresponse spectra obtained exhibit strong onsets at 0.62 eV and 0.95 eV, as well as a number of weaker features. Optical transitions are interpreted as between Ni3+ and Ni2+ ions, and the conduction and valence bands, as well as transitions involving a nickel-related defect. An energy diagram (at 300K) is deduced to consist of an Ni2+ ground state at 0.62 eV above the valence band and three excited states, and a nickel-related level located at 0.95 eV above the valence band. Optical absorption measurements have shown that the Ni+ two-electron trap concentration is negligible in semi-insulating GaP materials and increases appreciably under white light illumination.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Physics C: Solid State Physicsen_US
dc.titleOptical investigations of the states in GaP:Nien_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0022-3719/15/36/017en_US
dc.identifier.scopuseid_2-s2.0-2842607263en_US
dc.identifier.volume15en_US
dc.identifier.issue36en_US
dc.identifier.spage7355en_US
dc.identifier.epage7365en_US
dc.identifier.isiWOS:A1982PW65500018-
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridNicholas, RJ=7102569757en_US

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