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Article: Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions

TitleAcceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions
Authors
Issue Date1996
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/mplb/mplb.shtml
Citation
Modern Physics Letters B, 1996, v. 10 n. 8, p. 323-328 How to Cite?
AbstractThe radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company.
Persistent Identifierhttp://hdl.handle.net/10722/174970
ISSN
2015 Impact Factor: 0.547
2015 SCImago Journal Rankings: 0.222
References

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorTang, XHen_US
dc.date.accessioned2012-11-26T08:48:26Z-
dc.date.available2012-11-26T08:48:26Z-
dc.date.issued1996en_US
dc.identifier.citationModern Physics Letters B, 1996, v. 10 n. 8, p. 323-328en_US
dc.identifier.issn0217-9849en_US
dc.identifier.urihttp://hdl.handle.net/10722/174970-
dc.description.abstractThe radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company.en_US
dc.languageengen_US
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/mplb/mplb.shtmlen_US
dc.relation.ispartofModern Physics Letters Ben_US
dc.titleAcceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctionsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-26644460428en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-26644460428&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume10en_US
dc.identifier.issue8en_US
dc.identifier.spage323en_US
dc.identifier.epage328en_US
dc.publisher.placeSingaporeen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridTang, XH=37043381000en_US

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