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Article: Characteristics of InGaAs quantum dot infrared photodetectors

TitleCharacteristics of InGaAs quantum dot infrared photodetectors
Authors
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 21, p. 3153-3155 How to Cite?
AbstractA quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174953
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorMei, Ten_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorKarunasiri, Gen_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorWang, Sen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T08:48:20Z-
dc.date.available2012-11-26T08:48:20Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 21, p. 3153-3155en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174953-
dc.description.abstractA quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleCharacteristics of InGaAs quantum dot infrared photodetectorsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.122703en_US
dc.identifier.scopuseid_2-s2.0-22244489704en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-22244489704&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume73en_US
dc.identifier.issue21en_US
dc.identifier.spage3153en_US
dc.identifier.epage3155en_US
dc.identifier.isiWOS:000077063800044-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridMei, T=8259931100en_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridZhang, XH=8543612300en_US
dc.identifier.scopusauthoridKarunasiri, G=7003840635en_US
dc.identifier.scopusauthoridFan, WJ=34770971100en_US
dc.identifier.scopusauthoridWang, CH=8231951600en_US
dc.identifier.scopusauthoridJiang, J=55228867800en_US
dc.identifier.scopusauthoridWang, S=15833540900en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US

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