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Article: Structure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffraction

TitleStructure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffraction
Authors
KeywordsGallium Nitride
Low Energy Electron Diffraction
Surface Structure Determination
Issue Date2003
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Citation
Surface Review And Letters, 2003, v. 10 n. 6, p. 831-836 How to Cite?
AbstractA quantitative structural determination of the Ga-polar 1 × 1 (0001) surface of GaN is performed by quantitative low energy electron diffraction (LEED). The global best-fit structure is obtained by a new frozen LEED approach connected to a simulated annealing algorithm. The global minimization frozen (GMF) LEED search finds that the ordered structure consists of 1 ML of Ga adatoms at atop sites above Ga-terminated bilayers. The Ga adatoms are bonded with a Ga-Ga bond length of 2.51 Å. The spacings within surface bilayers show a weak oscillatory trend, with the outmost bilayer thickness expanding to 0.72 Å and the next bilayer thickness contracting to 0.64 Å, compared to the bulk thickness of 0.65 Å. The interlayer spacing between the first and second bilayers is 1.89 Å, while the next interlayer spacing is 1.94 Å, compared to the bulk value of 1.95 Å. These results are compared with data from other theoretical and experimental studies.
Persistent Identifierhttp://hdl.handle.net/10722/174931
ISSN
2015 Impact Factor: 0.435
2015 SCImago Journal Rankings: 0.156
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYu, ZXen_US
dc.contributor.authorTong, SYen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorMa, Sen_US
dc.contributor.authorWu, Hen_US
dc.date.accessioned2012-11-26T08:48:13Z-
dc.date.available2012-11-26T08:48:13Z-
dc.date.issued2003en_US
dc.identifier.citationSurface Review And Letters, 2003, v. 10 n. 6, p. 831-836en_US
dc.identifier.issn0218-625Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174931-
dc.description.abstractA quantitative structural determination of the Ga-polar 1 × 1 (0001) surface of GaN is performed by quantitative low energy electron diffraction (LEED). The global best-fit structure is obtained by a new frozen LEED approach connected to a simulated annealing algorithm. The global minimization frozen (GMF) LEED search finds that the ordered structure consists of 1 ML of Ga adatoms at atop sites above Ga-terminated bilayers. The Ga adatoms are bonded with a Ga-Ga bond length of 2.51 Å. The spacings within surface bilayers show a weak oscillatory trend, with the outmost bilayer thickness expanding to 0.72 Å and the next bilayer thickness contracting to 0.64 Å, compared to the bulk thickness of 0.65 Å. The interlayer spacing between the first and second bilayers is 1.89 Å, while the next interlayer spacing is 1.94 Å, compared to the bulk value of 1.95 Å. These results are compared with data from other theoretical and experimental studies.en_US
dc.languageengen_US
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtmlen_US
dc.relation.ispartofSurface Review and Lettersen_US
dc.subjectGallium Nitrideen_US
dc.subjectLow Energy Electron Diffractionen_US
dc.subjectSurface Structure Determinationen_US
dc.titleStructure determination of the 1 × 1 GaN(0001) surface by quantitative low energy electron diffractionen_US
dc.typeArticleen_US
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_US
dc.identifier.authorityWu, H=rp00813en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1142/S0218625X03005657en_US
dc.identifier.scopuseid_2-s2.0-1542515237en_US
dc.identifier.hkuros131997-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1542515237&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume10en_US
dc.identifier.issue6en_US
dc.identifier.spage831en_US
dc.identifier.epage836en_US
dc.identifier.isiWOS:000220312100001-
dc.publisher.placeSingaporeen_US
dc.identifier.scopusauthoridYu, ZX=35254695500en_US
dc.identifier.scopusauthoridTong, SY=24512624800en_US
dc.identifier.scopusauthoridXu, S=55223149000en_US
dc.identifier.scopusauthoridMa, S=7403725465en_US
dc.identifier.scopusauthoridWu, H=7405584367en_US

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