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Article: Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

TitleCarrier capture in InAs monolayer quantum wells grown on GaAs substrates
Authors
Issue Date1998
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee
Citation
Microelectronic Engineering, 1998, v. 43-44, p. 287-293 How to Cite?
AbstractIn high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model. 1998 Published by Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/174885
ISSN
2015 Impact Factor: 1.277
2015 SCImago Journal Rankings: 0.551
References

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorZhang, Xen_US
dc.date.accessioned2012-11-26T08:47:58Z-
dc.date.available2012-11-26T08:47:58Z-
dc.date.issued1998en_US
dc.identifier.citationMicroelectronic Engineering, 1998, v. 43-44, p. 287-293en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/10722/174885-
dc.description.abstractIn high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model. 1998 Published by Elsevier Science B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/meeen_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.titleCarrier capture in InAs monolayer quantum wells grown on GaAs substratesen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0346310292en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0346310292&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume43-44en_US
dc.identifier.spage287en_US
dc.identifier.epage293en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridZhang, XH=13006006900en_US
dc.identifier.scopusauthoridZhang, X=8543612300en_US

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