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Article: Modeling the optical constants of AlN and 6H-SiC

TitleModeling the optical constants of AlN and 6H-SiC
Authors
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3666, p. 260-267 How to Cite?
AbstractOptical constants of hexagonal AlN in the range 6-20 eV and 6H-SiC in the range 1-30 eV for the component perpendicular to the c axis are modeled using modified Adachi's model of the optical properties of semiconductors. Model parameters are determined by acceptance-probability-controlled simulated annealing. Main distinguishing feature of the model employed here is the use of variable broadening instead of the conventional Lorentzian one. In such a manner, broadening function can vary over a range of functions with similar kernels but different wings. Therefore, excessive absorption inherent to Lorentzian broadening can be reduced so that better agreement with experimental data can be achieved. Relative rms errors for the real and imaginary parts of the index of refraction, respectively, equal 3.5% and 5.2% for 6H-SiC and 1.5% and 1.9% for AlN.
Persistent Identifierhttp://hdl.handle.net/10722/174774
ISSN

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, Aleksandra Ben_US
dc.contributor.authorChan, KitSumen_US
dc.contributor.authorLi, EHerberten_US
dc.date.accessioned2012-11-26T08:47:22Z-
dc.date.available2012-11-26T08:47:22Z-
dc.date.issued1999en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3666, p. 260-267en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174774-
dc.description.abstractOptical constants of hexagonal AlN in the range 6-20 eV and 6H-SiC in the range 1-30 eV for the component perpendicular to the c axis are modeled using modified Adachi's model of the optical properties of semiconductors. Model parameters are determined by acceptance-probability-controlled simulated annealing. Main distinguishing feature of the model employed here is the use of variable broadening instead of the conventional Lorentzian one. In such a manner, broadening function can vary over a range of functions with similar kernels but different wings. Therefore, excessive absorption inherent to Lorentzian broadening can be reduced so that better agreement with experimental data can be achieved. Relative rms errors for the real and imaginary parts of the index of refraction, respectively, equal 3.5% and 5.2% for 6H-SiC and 1.5% and 1.9% for AlN.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titleModeling the optical constants of AlN and 6H-SiCen_US
dc.typeArticleen_US
dc.identifier.emailDjurisic, Aleksandra B: dalek@hku.hken_US
dc.identifier.authorityDjurisic, Aleksandra B=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032647863en_US
dc.identifier.volume3666en_US
dc.identifier.spage260en_US
dc.identifier.epage267en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDjurisic, Aleksandra B=7004904830en_US
dc.identifier.scopusauthoridChan, KitSum=7406033266en_US
dc.identifier.scopusauthoridLi, EHerbert=7201410087en_US

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