File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Arsenic doping kinetics in silicon during gas source molecular beam epitaxy

TitleArsenic doping kinetics in silicon during gas source molecular beam epitaxy
Authors
KeywordsAdsorption/Desorption Kinetics
Doping
Gas Source Molecular Beam Epitaxy (Gsmbe)
Silicon
Issue Date1998
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1998, v. 397 n. 1-3, p. 164-169 How to Cite?
AbstractArsenic doping from arsine during Si gas source molecular beam epitaxy (GSMBE) has been investigated. The As concentration in the epitaxial film has been measured by secondary ion mass spectroscopy (SIMS) and electrochemical capacitance-voltage (eCV) analysis. It has been found to relate to the surface coverage through a segregation process, while the surface coverage itself is determined by surface adsorption/desorption kinetics, whose dependence on the AsH3 flux indicates a non-integral-order desorption process of As from Si(100) surfaces. The surface coverage of arsenic is found to decrease the growth rate of Si from Si2H6, which can be used as a measure of As surface concentration. This enables segregation parameters such as the segregation ratio and the Gibbs energy for segregation to be extracted and they are shown to be in good agreement with previously reported results. © 1998 Elsevier Scieace B.V.
Persistent Identifierhttp://hdl.handle.net/10722/174755
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792
References

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorLees, AKen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:16Z-
dc.date.available2012-11-26T08:47:16Z-
dc.date.issued1998en_US
dc.identifier.citationSurface Science, 1998, v. 397 n. 1-3, p. 164-169en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/174755-
dc.description.abstractArsenic doping from arsine during Si gas source molecular beam epitaxy (GSMBE) has been investigated. The As concentration in the epitaxial film has been measured by secondary ion mass spectroscopy (SIMS) and electrochemical capacitance-voltage (eCV) analysis. It has been found to relate to the surface coverage through a segregation process, while the surface coverage itself is determined by surface adsorption/desorption kinetics, whose dependence on the AsH3 flux indicates a non-integral-order desorption process of As from Si(100) surfaces. The surface coverage of arsenic is found to decrease the growth rate of Si from Si2H6, which can be used as a measure of As surface concentration. This enables segregation parameters such as the segregation ratio and the Gibbs energy for segregation to be extracted and they are shown to be in good agreement with previously reported results. © 1998 Elsevier Scieace B.V.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.subjectAdsorption/Desorption Kineticsen_US
dc.subjectDopingen_US
dc.subjectGas Source Molecular Beam Epitaxy (Gsmbe)en_US
dc.subjectSiliconen_US
dc.titleArsenic doping kinetics in silicon during gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031990476en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031990476&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume397en_US
dc.identifier.issue1-3en_US
dc.identifier.spage164en_US
dc.identifier.epage169en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=7601345343en_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridLees, AK=7202900980en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats