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Article: Raman scattering from In1-x-yGaxAlyAs quaternary alloys

TitleRaman scattering from In1-x-yGaxAlyAs quaternary alloys
Authors
Issue Date1998
Citation
Hongwai Yu Haomibo Xuebao/Journal Of Infrared And Millimeter Waves, 1998, v. 17 n. 3, p. 187-191 How to Cite?
AbstractThe Raman scattering from In1-x-yGaxAly As/InP lattice matched quaternary alloys is studied. The alloys are grown on (100) oriented InP substrates by molecular beam epitaxy. The composition and intensity dependence of optical phonon mode frequencies show that the alloys exhibit three-mode behavior including InAs-like, GaAs-like and AlAs-like modes. The LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes are also observed due to disorder effect, resulting in the asymmetrical shapes of the Raman peaks of phonons.
Persistent Identifierhttp://hdl.handle.net/10722/174753
ISSN
2015 Impact Factor: 0.266
2015 SCImago Journal Rankings: 0.292

 

DC FieldValueLanguage
dc.contributor.authorHan, Hexiangen_US
dc.contributor.authorWang, Zhaopingen_US
dc.contributor.authorLi, Guohuaen_US
dc.contributor.authorXu, Shijieen_US
dc.contributor.authorDing, Kunen_US
dc.contributor.authorLiu, Nanzhuen_US
dc.contributor.authorZhu, Zuomingen_US
dc.date.accessioned2012-11-26T08:47:15Z-
dc.date.available2012-11-26T08:47:15Z-
dc.date.issued1998en_US
dc.identifier.citationHongwai Yu Haomibo Xuebao/Journal Of Infrared And Millimeter Waves, 1998, v. 17 n. 3, p. 187-191en_US
dc.identifier.issn1001-9014en_US
dc.identifier.urihttp://hdl.handle.net/10722/174753-
dc.description.abstractThe Raman scattering from In1-x-yGaxAly As/InP lattice matched quaternary alloys is studied. The alloys are grown on (100) oriented InP substrates by molecular beam epitaxy. The composition and intensity dependence of optical phonon mode frequencies show that the alloys exhibit three-mode behavior including InAs-like, GaAs-like and AlAs-like modes. The LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes are also observed due to disorder effect, resulting in the asymmetrical shapes of the Raman peaks of phonons.en_US
dc.languageengen_US
dc.relation.ispartofHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Wavesen_US
dc.titleRaman scattering from In1-x-yGaxAlyAs quaternary alloysen_US
dc.typeArticleen_US
dc.identifier.emailXu, Shijie: sjxu@hku.hken_US
dc.identifier.authorityXu, Shijie=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031632036en_US
dc.identifier.volume17en_US
dc.identifier.issue3en_US
dc.identifier.spage187en_US
dc.identifier.epage191en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridHan, Hexiang=7401969307en_US
dc.identifier.scopusauthoridWang, Zhaoping=8400682700en_US
dc.identifier.scopusauthoridLi, Guohua=8161794300en_US
dc.identifier.scopusauthoridXu, Shijie=7404439005en_US
dc.identifier.scopusauthoridDing, Kun=7103198005en_US
dc.identifier.scopusauthoridLiu, Nanzhu=7402430075en_US
dc.identifier.scopusauthoridZhu, Zuoming=7404802973en_US

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