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Article: Fermi level position at metal/semi-insulating - GaAs (1 0 0) interfaces studied by photoelectric techniques

TitleFermi level position at metal/semi-insulating - GaAs (1 0 0) interfaces studied by photoelectric techniques
Authors
Issue Date1997
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1997, v. 102 n. 12, p. 833-836 How to Cite?
AbstractThe Schottky barrier heights in Au/semi-insulating (SI) - GaAs (1 0 0) and Ni/SI - GaAs (1 0 0) contacts at room temperature have been determined from photovoltage and internal photoemission measurements. Both techniques give excellent agreement with each other. A small upward surface band bending of 0.141 eV for Au/SI - GaAs (1 0 0) and of 0.062 eV for Ni/SI - GaAs (1 0 0) has been determined. The interfacial Fermi level is found to lie at 0.772 eV and 0.690 eV below the conduction band minimum (CBM) at the Au/SI - GaAs (1 0 0) and Ni/SI - GaAs (1 0 0) interfaces, respectively. The accuracy of both photoelectric techniques suggests their beneficial use in future systematic studies on semi-insulating substrates in the study of Schottky barrier formation. © 1997 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/174743
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:47:11Z-
dc.date.available2012-11-26T08:47:11Z-
dc.date.issued1997en_HK
dc.identifier.citationSolid State Communications, 1997, v. 102 n. 12, p. 833-836en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174743-
dc.description.abstractThe Schottky barrier heights in Au/semi-insulating (SI) - GaAs (1 0 0) and Ni/SI - GaAs (1 0 0) contacts at room temperature have been determined from photovoltage and internal photoemission measurements. Both techniques give excellent agreement with each other. A small upward surface band bending of 0.141 eV for Au/SI - GaAs (1 0 0) and of 0.062 eV for Ni/SI - GaAs (1 0 0) has been determined. The interfacial Fermi level is found to lie at 0.772 eV and 0.690 eV below the conduction band minimum (CBM) at the Au/SI - GaAs (1 0 0) and Ni/SI - GaAs (1 0 0) interfaces, respectively. The accuracy of both photoelectric techniques suggests their beneficial use in future systematic studies on semi-insulating substrates in the study of Schottky barrier formation. © 1997 Elsevier Science Ltd.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleFermi level position at metal/semi-insulating - GaAs (1 0 0) interfaces studied by photoelectric techniquesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1098(97)00134-8-
dc.identifier.scopuseid_2-s2.0-0031166554en_HK
dc.identifier.hkuros22875-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031166554&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume102en_HK
dc.identifier.issue12en_HK
dc.identifier.spage833en_HK
dc.identifier.epage836en_HK
dc.identifier.isiWOS:A1997XC72300001-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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