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Article: Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

TitleOptical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
Authors
KeywordsPhotoluminescent Materials/Devices
Quantum Wells
Semiconductor Heterojunctions
Semiconductor Lasers
Semiconductor Measurements
Issue Date1997
Citation
Ieee Journal On Selected Topics In Quantum Electronics, 1997, v. 3 n. 2, p. 471-474 How to Cite?
AbstractLow-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.
Persistent Identifierhttp://hdl.handle.net/10722/174738
ISSN
2015 Impact Factor: 3.466
2015 SCImago Journal Rankings: 1.632
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorZhang, Xen_US
dc.contributor.authorZhang, ZHen_US
dc.contributor.authorLuo, CPen_US
dc.contributor.authorYuan, ZLen_US
dc.contributor.authorXu, ZYen_US
dc.contributor.authorZhou, JMen_US
dc.date.accessioned2012-11-26T08:47:10Z-
dc.date.available2012-11-26T08:47:10Z-
dc.date.issued1997en_US
dc.identifier.citationIeee Journal On Selected Topics In Quantum Electronics, 1997, v. 3 n. 2, p. 471-474en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174738-
dc.description.abstractLow-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.subjectPhotoluminescent Materials/Devicesen_US
dc.subjectQuantum Wellsen_US
dc.subjectSemiconductor Heterojunctionsen_US
dc.subjectSemiconductor Lasersen_US
dc.subjectSemiconductor Measurementsen_US
dc.titleOptical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substratesen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/2944.605695en_US
dc.identifier.scopuseid_2-s2.0-0031108482en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031108482&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume3en_US
dc.identifier.issue2en_US
dc.identifier.spage471en_US
dc.identifier.epage474en_US
dc.identifier.isiWOS:A1997XP73200049-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridZhang, X=54680424000en_US
dc.identifier.scopusauthoridZhang, ZH=54680422700en_US
dc.identifier.scopusauthoridLuo, CP=7402443213en_US
dc.identifier.scopusauthoridYuan, ZL=8880325600en_US
dc.identifier.scopusauthoridXu, ZY=7405429019en_US
dc.identifier.scopusauthoridZhou, JM=54680442200en_US

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