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Article: Reverse I-V characteristics of Au/semi-insulating GaAs(1 0 0)

TitleReverse I-V characteristics of Au/semi-insulating GaAs(1 0 0)
Authors
Issue Date1997
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1997, v. 101 n. 9, p. 715-720 How to Cite?
AbstractThe reverse I-V characteristics of the Au/semi-insulating (SI)-GaAs(1 0 0) contact structure have been studied in the temperature range 240-300 K. The temperature dependence of the resistance determined from the low bias (0-15 V) linear portion of the I-V curves gives a Fermi-level position for the bulk GaAs 0.68 ± 0.05 eV below the conduction band, in good agreement with that determined from other techniques, indicating that the reverse current transport in this regime is predominantly determined by the bulk resistance of the Si-GaAs. At higher reverse biases a current limitation establishes which is explained in terms of thermionic and thermionic field emission across the Au/SI-GaAs Schottky-like barrier. The electric fields that occur at the interface cause a larger than expected saturated emission current due to the barrier lowering effect and because the effective Richardson constant increases by about two orders of magnitude as electrons are transferred into the L band minima of the GaAs. The onset of the Gunn effect also explains the saturation of the reverse current for applied biases greater than 50 V where the electric field close to the interface self limits through the faster EL 2+ electron capture from the L band. © 1997 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/174737
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:47:09Z-
dc.date.available2012-11-26T08:47:09Z-
dc.date.issued1997en_HK
dc.identifier.citationSolid State Communications, 1997, v. 101 n. 9, p. 715-720en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174737-
dc.description.abstractThe reverse I-V characteristics of the Au/semi-insulating (SI)-GaAs(1 0 0) contact structure have been studied in the temperature range 240-300 K. The temperature dependence of the resistance determined from the low bias (0-15 V) linear portion of the I-V curves gives a Fermi-level position for the bulk GaAs 0.68 ± 0.05 eV below the conduction band, in good agreement with that determined from other techniques, indicating that the reverse current transport in this regime is predominantly determined by the bulk resistance of the Si-GaAs. At higher reverse biases a current limitation establishes which is explained in terms of thermionic and thermionic field emission across the Au/SI-GaAs Schottky-like barrier. The electric fields that occur at the interface cause a larger than expected saturated emission current due to the barrier lowering effect and because the effective Richardson constant increases by about two orders of magnitude as electrons are transferred into the L band minima of the GaAs. The onset of the Gunn effect also explains the saturation of the reverse current for applied biases greater than 50 V where the electric field close to the interface self limits through the faster EL 2+ electron capture from the L band. © 1997 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleReverse I-V characteristics of Au/semi-insulating GaAs(1 0 0)en_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1098(96)00656-4-
dc.identifier.scopuseid_2-s2.0-0031094949en_HK
dc.identifier.hkuros21834-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031094949&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume101en_HK
dc.identifier.issue9en_HK
dc.identifier.spage715en_HK
dc.identifier.epage720en_HK
dc.identifier.isiWOS:A1997WJ15100015-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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