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Article: Epitaxial growth mode and silicon/silicon-germanium heterointerfaces

TitleEpitaxial growth mode and silicon/silicon-germanium heterointerfaces
Authors
Issue Date1996
PublisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522
Citation
Journal Of Materials Science: Materials In Electronics, 1996, v. 7 n. 5, p. 321-325 How to Cite?
AbstractSilicon-germanium/silicon (Si1-xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (001) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), rocking curve techniques and transmission electron microscopy (TEM). For the substrate temperatures used in this work (450 °C to 520 °C) the Si growth rate is limited by hydrogen desorption kinetics, whereas the growth of SiGe is limited primarily by the arrival rate of the source gases onto the Si substrates. XRD analysis of the structures indicates a significant well plus barrier period variation of approximately 5-10%, attributed to fluctuations in the substrate temperature during growth, since these cause significant variations in the growth rate of the Si barriers. For x<0.30 we find nearly ideal Si/SiGe interfaces as determined from a comparison of the XRD data with dynamical simulations of the 004 X-ray reflectivity, although TEM micrographs indicate that the x=0.30 samples exhibit undulations in the first SiGe/Si interface of the structures. For x=0.50 such undulations occur throughout the MQW structure; the undulation amplitude decreases with decreasing growth temperature but the period remains unchanged. The observed improvement in the SiGe/Si interface planarity at lower growth temperatures is attributed to a reduction in the surface diffusion of Si and Ge with decreasing growth temperature. © 1996 Chapman & Hall.
Persistent Identifierhttp://hdl.handle.net/10722/174730
ISSN
2015 Impact Factor: 1.798
2015 SCImago Journal Rankings: 0.553
References

 

DC FieldValueLanguage
dc.contributor.authorFernández, JMen_US
dc.contributor.authorHart, Len_US
dc.contributor.authorZhang, XMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:07Z-
dc.date.available2012-11-26T08:47:07Z-
dc.date.issued1996en_US
dc.identifier.citationJournal Of Materials Science: Materials In Electronics, 1996, v. 7 n. 5, p. 321-325en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://hdl.handle.net/10722/174730-
dc.description.abstractSilicon-germanium/silicon (Si1-xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (001) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), rocking curve techniques and transmission electron microscopy (TEM). For the substrate temperatures used in this work (450 °C to 520 °C) the Si growth rate is limited by hydrogen desorption kinetics, whereas the growth of SiGe is limited primarily by the arrival rate of the source gases onto the Si substrates. XRD analysis of the structures indicates a significant well plus barrier period variation of approximately 5-10%, attributed to fluctuations in the substrate temperature during growth, since these cause significant variations in the growth rate of the Si barriers. For x<0.30 we find nearly ideal Si/SiGe interfaces as determined from a comparison of the XRD data with dynamical simulations of the 004 X-ray reflectivity, although TEM micrographs indicate that the x=0.30 samples exhibit undulations in the first SiGe/Si interface of the structures. For x=0.50 such undulations occur throughout the MQW structure; the undulation amplitude decreases with decreasing growth temperature but the period remains unchanged. The observed improvement in the SiGe/Si interface planarity at lower growth temperatures is attributed to a reduction in the surface diffusion of Si and Ge with decreasing growth temperature. © 1996 Chapman & Hall.en_US
dc.languageengen_US
dc.publisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0957-4522en_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.titleEpitaxial growth mode and silicon/silicon-germanium heterointerfacesen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030260064en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030260064&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7en_US
dc.identifier.issue5en_US
dc.identifier.spage321en_US
dc.identifier.epage325en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridHart, L=7201500367en_US
dc.identifier.scopusauthoridZhang, XM=8521572500en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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