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Article: Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness

TitleSilicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness
Authors
Issue Date1996
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 241-247 How to Cite?
AbstractWe have grown silicon-germanium/silicon (Si1-xGex/Si, x < 0.30) multiple quantum wells (MQWs) by gas-source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases, and have characterized their structural properties by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD) rocking curve and transmission electron microscopy (TEM) techniques. A substrate temperature of 520°C was maintained during growth resulting in a Si and SiGe growth rate-limited primarily by hydrogen desorption kinetics. Under these conditions, surface hydrogen is expected to function as a surfactant thereby enhancing interfacial abruptness at the Si/SiGe interface through suppression of Ge surface segregation. Independent of Ge composition in the Si1-xGex wells, we find abrupt interfaces, as determined from XRD measurements, and sharp SIMS decay lengths of the order of 2.5 nm/decade. For nominally identical Si barriers in all samples examined, we find thicker barriers for the structures with higher Ge content in the well. For the specimens with x = 0.30 in the wells, we find a noticeable well plus barrier period variation of approximately 5%-10% as determined from XRD rocking curves, as well as TEM evidence for the onset of strain relaxation via interface undulation formation in the first quantum well of the structure. A discussion of these results in terms of hydrogen desorption kinetics is presented.
Persistent Identifierhttp://hdl.handle.net/10722/174727
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
References

 

DC FieldValueLanguage
dc.contributor.authorFernández, JMen_US
dc.contributor.authorHart, Len_US
dc.contributor.authorZhang, XMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:06Z-
dc.date.available2012-11-26T08:47:06Z-
dc.date.issued1996en_US
dc.identifier.citationJournal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 241-247en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174727-
dc.description.abstractWe have grown silicon-germanium/silicon (Si1-xGex/Si, x < 0.30) multiple quantum wells (MQWs) by gas-source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases, and have characterized their structural properties by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD) rocking curve and transmission electron microscopy (TEM) techniques. A substrate temperature of 520°C was maintained during growth resulting in a Si and SiGe growth rate-limited primarily by hydrogen desorption kinetics. Under these conditions, surface hydrogen is expected to function as a surfactant thereby enhancing interfacial abruptness at the Si/SiGe interface through suppression of Ge surface segregation. Independent of Ge composition in the Si1-xGex wells, we find abrupt interfaces, as determined from XRD measurements, and sharp SIMS decay lengths of the order of 2.5 nm/decade. For nominally identical Si barriers in all samples examined, we find thicker barriers for the structures with higher Ge content in the well. For the specimens with x = 0.30 in the wells, we find a noticeable well plus barrier period variation of approximately 5%-10% as determined from XRD rocking curves, as well as TEM evidence for the onset of strain relaxation via interface undulation formation in the first quantum well of the structure. A discussion of these results in terms of hydrogen desorption kinetics is presented.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleSilicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptnessen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030194082en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030194082&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume164en_US
dc.identifier.issue1-4en_US
dc.identifier.spage241en_US
dc.identifier.epage247en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridHart, L=7201500367en_US
dc.identifier.scopusauthoridZhang, XM=8521572500en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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