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Article: AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure

TitleAlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure
Authors
KeywordsA. Heterojunctions
A. Semiconductors
D. Electron-Phonon Interactions
D. Phonons
E. Luminescence
Issue Date1996
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1996, v. 98 n. 12, p. 1053-1056 How to Cite?
AbstractWe report the observation of AlGaAs optical phonon replicas in the photoluminescence spectra from GaAs layer of an Al0.3Ga0.7As/GaAs heterostructure at low temperature. The AlAs-like transverse and longitudinal optical modes of Al0.3Ga0.7As alloy are observed by using excitation light with 488 nm wavelength. Also, the replicas involving one and two GaAs-like longitudinal optical phonons are observed when the excitation light used is He-Ne laser with 632.8 nm wavelength. The phonon energies determined from our measurement are in agreement within 10% with those expected. Copyright © 1996 Published by Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/174726
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorTang, XHen_US
dc.date.accessioned2012-11-26T08:47:05Z-
dc.date.available2012-11-26T08:47:05Z-
dc.date.issued1996en_US
dc.identifier.citationSolid State Communications, 1996, v. 98 n. 12, p. 1053-1056en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/10722/174726-
dc.description.abstractWe report the observation of AlGaAs optical phonon replicas in the photoluminescence spectra from GaAs layer of an Al0.3Ga0.7As/GaAs heterostructure at low temperature. The AlAs-like transverse and longitudinal optical modes of Al0.3Ga0.7As alloy are observed by using excitation light with 488 nm wavelength. Also, the replicas involving one and two GaAs-like longitudinal optical phonons are observed when the excitation light used is He-Ne laser with 632.8 nm wavelength. The phonon energies determined from our measurement are in agreement within 10% with those expected. Copyright © 1996 Published by Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_US
dc.relation.ispartofSolid State Communicationsen_US
dc.subjectA. Heterojunctionsen_US
dc.subjectA. Semiconductorsen_US
dc.subjectD. Electron-Phonon Interactionsen_US
dc.subjectD. Phononsen_US
dc.subjectE. Luminescenceen_US
dc.titleAlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructureen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1098(96)00158-5en_US
dc.identifier.scopuseid_2-s2.0-0030172178en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030172178&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume98en_US
dc.identifier.issue12en_US
dc.identifier.spage1053en_US
dc.identifier.epage1056en_US
dc.identifier.isiWOS:A1996UT02900005-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridTang, XH=37043381000en_US

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