File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

TitleCharacterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
Authors
Issue Date1995
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1995, v. 10 n. 9, p. 1247-1252 How to Cite?
AbstractWe have grown n-channel Si/SiGe modulation doped structures by gas source molecular beam epitaxy using arsine as the n-type dopant source. The structures were characterized by transmission electron microscopy, secondary ion mass spectroscopy, electrochemical capacitance voltage analysis and x-ray diffraction. Arsenic and free electron concentrations in excess of 10 19 cm -3 could be obtained with substantial surface segregation. Several different structures have been grown and their transport properties investigated. Low-temperature electron mobilities of up to 60000 cm 2 V -1 s -1 in the dark (75800 cm 2 V -1 s -1 after illumination) were obtained with a sheet density range (4-7)*10 11 cm -2. Parallel conduction is discussed in terms of the effect of illumination.
Persistent Identifierhttp://hdl.handle.net/10722/174717
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676

 

DC FieldValueLanguage
dc.contributor.authorMatsumura, Men_US
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorThornton, TJen_US
dc.contributor.authorPrasad, RSen_US
dc.contributor.authorHolmes, SNen_US
dc.contributor.authorZhang, XMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:02Z-
dc.date.available2012-11-26T08:47:02Z-
dc.date.issued1995en_US
dc.identifier.citationSemiconductor Science And Technology, 1995, v. 10 n. 9, p. 1247-1252en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/174717-
dc.description.abstractWe have grown n-channel Si/SiGe modulation doped structures by gas source molecular beam epitaxy using arsine as the n-type dopant source. The structures were characterized by transmission electron microscopy, secondary ion mass spectroscopy, electrochemical capacitance voltage analysis and x-ray diffraction. Arsenic and free electron concentrations in excess of 10 19 cm -3 could be obtained with substantial surface segregation. Several different structures have been grown and their transport properties investigated. Low-temperature electron mobilities of up to 60000 cm 2 V -1 s -1 in the dark (75800 cm 2 V -1 s -1 after illumination) were obtained with a sheet density range (4-7)*10 11 cm -2. Parallel conduction is discussed in terms of the effect of illumination.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleCharacterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/10/9/007en_US
dc.identifier.scopuseid_2-s2.0-0029378707en_US
dc.identifier.volume10en_US
dc.identifier.issue9en_US
dc.identifier.spage1247en_US
dc.identifier.epage1252en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridMatsumura, M=22994048800en_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridThornton, TJ=7004444402en_US
dc.identifier.scopusauthoridPrasad, RS=7402378717en_US
dc.identifier.scopusauthoridHolmes, SN=7203030829en_US
dc.identifier.scopusauthoridZhang, XM=7410271022en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats