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Article: Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

TitleGrowth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
Authors
Issue Date1995
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1995, v. 150 n. 1 -4 pt 2, p. 950-954 How to Cite?
AbstractSiGe/Si multi-quantum wells (MQWs) were grown on ridges formed on terraces between parallel V-grooves along the [110] direction on Si(001) surfaces. The structures were characterized using photoluminescence (PL), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). SEM micrographs indicate that the morphology of the low index side walls of the ridges is significantly better than that of the etched V-grooves. Cross-sectional TEM studies show that SiGe/Si MQW structures are formed at the top of the ridges, which provides possible confinement for quantum wires. Compared with MQWs formed on an unpatterned (001) surface, PL emission corresponding to the no-phonon (NP) and transverse optical (TO) phonon assisted peaks is shifted to higher energy. The position of these peaks appears to be independent of the size of the ridge.
Persistent Identifierhttp://hdl.handle.net/10722/174715
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752

 

DC FieldValueLanguage
dc.contributor.authorZhang, Jen_US
dc.contributor.authorZhang, XMen_US
dc.contributor.authorMatsumura, Aen_US
dc.contributor.authorMarinopoulou, Aen_US
dc.contributor.authorHartung, Jen_US
dc.contributor.authorAnwar, Nen_US
dc.contributor.authorParry, Gen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorFernandez, JMen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:01Z-
dc.date.available2012-11-26T08:47:01Z-
dc.date.issued1995en_US
dc.identifier.citationJournal Of Crystal Growth, 1995, v. 150 n. 1 -4 pt 2, p. 950-954en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174715-
dc.description.abstractSiGe/Si multi-quantum wells (MQWs) were grown on ridges formed on terraces between parallel V-grooves along the [110] direction on Si(001) surfaces. The structures were characterized using photoluminescence (PL), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). SEM micrographs indicate that the morphology of the low index side walls of the ridges is significantly better than that of the etched V-grooves. Cross-sectional TEM studies show that SiGe/Si MQW structures are formed at the top of the ridges, which provides possible confinement for quantum wires. Compared with MQWs formed on an unpatterned (001) surface, PL emission corresponding to the no-phonon (NP) and transverse optical (TO) phonon assisted peaks is shifted to higher energy. The position of these peaks appears to be independent of the size of the ridge.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleGrowth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0029305772en_US
dc.identifier.volume150en_US
dc.identifier.issue1 -4 pt 2en_US
dc.identifier.spage950en_US
dc.identifier.epage954en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridZhang, J=36068161800en_US
dc.identifier.scopusauthoridZhang, XM=36066911900en_US
dc.identifier.scopusauthoridMatsumura, A=7103092678en_US
dc.identifier.scopusauthoridMarinopoulou, A=6507097785en_US
dc.identifier.scopusauthoridHartung, J=7103214122en_US
dc.identifier.scopusauthoridAnwar, N=36794134500en_US
dc.identifier.scopusauthoridParry, G=7103406642en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridFernandez, JM=7404575272en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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