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Article: High-field nonlinear perpendicular transport of electron in GaAs/Al0.3Ga0.7As short-period superlattice

TitleHigh-field nonlinear perpendicular transport of electron in GaAs/Al0.3Ga0.7As short-period superlattice
Authors
Issue Date1995
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1995, v. 16 n. 4, p. 317-320 How to Cite?
AbstractThe nonlinear perpendicular transport of electron in a GaAs/Al0.3Ga0.7As undoped short-period superlattice n+-SL-n+ structure was investigated by current-voltage and differential conductance measurement at 300K and 77K. The results provided the sublinear current-voltage characteristics in the region of high-field at both temperatures. The conductance at 77K is larger than that at 300K in the corresponding region. Esaki-Tsu mechanism may be responsible for these experimental results.
Persistent Identifierhttp://hdl.handle.net/10722/174714
ISSN
2011 SCImago Journal Rankings: 0.140

 

DC FieldValueLanguage
dc.contributor.authorXu, Shijieen_US
dc.contributor.authorLiu, Jianen_US
dc.contributor.authorZheng, Houzhien_US
dc.contributor.authorLi, Yuexiaen_US
dc.contributor.authorLi, Chengfangen_US
dc.contributor.authorZheng, Haiqunen_US
dc.date.accessioned2012-11-26T08:47:00Z-
dc.date.available2012-11-26T08:47:00Z-
dc.date.issued1995en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1995, v. 16 n. 4, p. 317-320en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/174714-
dc.description.abstractThe nonlinear perpendicular transport of electron in a GaAs/Al0.3Ga0.7As undoped short-period superlattice n+-SL-n+ structure was investigated by current-voltage and differential conductance measurement at 300K and 77K. The results provided the sublinear current-voltage characteristics in the region of high-field at both temperatures. The conductance at 77K is larger than that at 300K in the corresponding region. Esaki-Tsu mechanism may be responsible for these experimental results.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.titleHigh-field nonlinear perpendicular transport of electron in GaAs/Al0.3Ga0.7As short-period superlatticeen_US
dc.typeArticleen_US
dc.identifier.emailXu, Shijie: sjxu@hku.hken_US
dc.identifier.authorityXu, Shijie=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0029287160en_US
dc.identifier.volume16en_US
dc.identifier.issue4en_US
dc.identifier.spage317en_US
dc.identifier.epage320en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridXu, Shijie=7404439005en_US
dc.identifier.scopusauthoridLiu, Jian=36077311800en_US
dc.identifier.scopusauthoridZheng, Houzhi=7403440708en_US
dc.identifier.scopusauthoridLi, Yuexia=24284717500en_US
dc.identifier.scopusauthoridLi, Chengfang=8404267600en_US
dc.identifier.scopusauthoridZheng, Haiqun=7403441001en_US

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