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Article: Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon

TitleCurrent transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon
Authors
Issue Date1993
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1993, v. 36 n. 7, p. 949-954 How to Cite?
AbstractThe measurements of photovoltage, internal photoemission, current-voltage (I-V) and capacitance-voltage (C-V) have been performed for Au on n-Si (111) within a temperature range of 7 to 300 K. The values of Schottky-barrier height at room temperature obtained from these four measurements are in very good agreement, but conflicting results have been obtained at low temperatures. The measurements of both the internal photoemission and the C-V show a negative temperature dependence of the barrier height which is almost identical to that of the indirect energy band gap in silicon, but the barrier height obtained from the photovoltage measurements and the I-V measurements strongly decreases as temperature decreases. In this paper, the influence of the current transport on the determination of the Schottky-barrier height is discussed, and it is demonstrated that the conflicting results may be explained well in terms of the recombination current involved in the photovoltage measurements and the I-V measurements.
Persistent Identifierhttp://hdl.handle.net/10722/174699
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T08:46:56Z-
dc.date.available2012-11-26T08:46:56Z-
dc.date.issued1993en_HK
dc.identifier.citationSolid-State Electronics, 1993, v. 36 n. 7, p. 949-954en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174699-
dc.description.abstractThe measurements of photovoltage, internal photoemission, current-voltage (I-V) and capacitance-voltage (C-V) have been performed for Au on n-Si (111) within a temperature range of 7 to 300 K. The values of Schottky-barrier height at room temperature obtained from these four measurements are in very good agreement, but conflicting results have been obtained at low temperatures. The measurements of both the internal photoemission and the C-V show a negative temperature dependence of the barrier height which is almost identical to that of the indirect energy band gap in silicon, but the barrier height obtained from the photovoltage measurements and the I-V measurements strongly decreases as temperature decreases. In this paper, the influence of the current transport on the determination of the Schottky-barrier height is discussed, and it is demonstrated that the conflicting results may be explained well in terms of the recombination current involved in the photovoltage measurements and the I-V measurements.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.titleCurrent transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on siliconen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(93)90109-4en_HK
dc.identifier.scopuseid_2-s2.0-0027624839en_HK
dc.identifier.volume36en_HK
dc.identifier.issue7en_HK
dc.identifier.spage949en_HK
dc.identifier.epage954en_HK
dc.identifier.isiWOS:A1993LF20500003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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