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Article: Orientation of thin crystal layer with zincblende structure using raman scattering extrema method

TitleOrientation of thin crystal layer with zincblende structure using raman scattering extrema method
Authors
Issue Date1990
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1990, v. 11 n. 7, p. 500-507 How to Cite?
AbstractThe Raman Scattering Extrema Method proposed by the authors to determine the orientation of a thin layer crystal with diamond structure is extended to the zincblende structure. The Raman scattering intensities of LO and TO phonons for a zincblende-structured thin layer as functions of both the orientation of this layer and the polarization direction of the incident light have been derived. The orientation of the layer is determined by means of the extrema of these functions. For GaP wafers, the result obtained by using this method is compared with that determined by the X-ray method.
Persistent Identifierhttp://hdl.handle.net/10722/174689
ISSN
2011 SCImago Journal Rankings: 0.140

 

DC FieldValueLanguage
dc.contributor.authorWu, Huashengen_US
dc.contributor.authorWu, Jiangenen_US
dc.contributor.authorQu, Fengyuanen_US
dc.date.accessioned2012-11-26T08:46:53Z-
dc.date.available2012-11-26T08:46:53Z-
dc.date.issued1990en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1990, v. 11 n. 7, p. 500-507en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/174689-
dc.description.abstractThe Raman Scattering Extrema Method proposed by the authors to determine the orientation of a thin layer crystal with diamond structure is extended to the zincblende structure. The Raman scattering intensities of LO and TO phonons for a zincblende-structured thin layer as functions of both the orientation of this layer and the polarization direction of the incident light have been derived. The orientation of the layer is determined by means of the extrema of these functions. For GaP wafers, the result obtained by using this method is compared with that determined by the X-ray method.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.titleOrientation of thin crystal layer with zincblende structure using raman scattering extrema methoden_US
dc.typeArticleen_US
dc.identifier.emailWu, Huasheng: hswu@hkucc.hku.hken_US
dc.identifier.authorityWu, Huasheng=rp00813en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025454938en_US
dc.identifier.volume11en_US
dc.identifier.issue7en_US
dc.identifier.spage500en_US
dc.identifier.epage507en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridWu, Huasheng=7405584367en_US
dc.identifier.scopusauthoridWu, Jiangen=7409259986en_US
dc.identifier.scopusauthoridQu, Fengyuan=7006228330en_US

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