Orientation of thin crystal layer with zincblende structure using raman scattering extrema method

Abstract

The Raman Scattering Extrema Method proposed by the authors to determine the orientation of a thin layer crystal with diamond structure is extended to the zincblende structure. The Raman scattering intensities of LO and TO phonons for a zincblende-structured thin layer as functions of both the orientation of this layer and the polarization direction of the incident light have been derived. The orientation of the layer is determined by means of the extrema of these functions. For GaP wafers, the result obtained by using this method is compared with that determined by the X-ray method.