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Article: DOUBLE SOURCE PHOTOCONDUCTIVITY OF InP:Fe.

TitleDOUBLE SOURCE PHOTOCONDUCTIVITY OF InP:Fe.
Authors
Issue Date1985
Citation
Physica Status Solidi (A) Applied Research, 1985, v. 88 n. 1, p. 347-353 How to Cite?
AbstractExperimental results are reported from double source photoconductivity measurements on semi-insulating InP:Fe materials containing mainly Fe**2** plus centers. These results indicate that the 0. 78 ev transition generates holes and is complementary to the 0. 64 ev electronic transition. In addition, the 1. 26 ev strong photoconductive onset is found to be associated with Fe**2** plus rich samples, probably arising from an electronic transition to the L-point of the conduction band. This feature is quite distinct from the 1. 13 ev onset normally observed for samples with small shallow donor compensation.
Persistent Identifierhttp://hdl.handle.net/10722/174679
ISSN

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_US
dc.contributor.authorNicholas, RJen_US
dc.date.accessioned2012-11-26T08:46:50Z-
dc.date.available2012-11-26T08:46:50Z-
dc.date.issued1985en_US
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 1985, v. 88 n. 1, p. 347-353en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://hdl.handle.net/10722/174679-
dc.description.abstractExperimental results are reported from double source photoconductivity measurements on semi-insulating InP:Fe materials containing mainly Fe**2** plus centers. These results indicate that the 0. 78 ev transition generates holes and is complementary to the 0. 64 ev electronic transition. In addition, the 1. 26 ev strong photoconductive onset is found to be associated with Fe**2** plus rich samples, probably arising from an electronic transition to the L-point of the conduction band. This feature is quite distinct from the 1. 13 ev onset normally observed for samples with small shallow donor compensation.en_US
dc.languageengen_US
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_US
dc.titleDOUBLE SOURCE PHOTOCONDUCTIVITY OF InP:Fe.en_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022024779en_US
dc.identifier.volume88en_US
dc.identifier.issue1en_US
dc.identifier.spage347en_US
dc.identifier.epage353en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.scopusauthoridNicholas, RJ=7102569757en_US
dc.identifier.issnl0031-8965-

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