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Article: Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well

TitleStrong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well
Authors
Issue Date1996
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 24, p. 17701-17704 How to Cite?
AbstractWe have investigated photoluminescence and photoluminescence excitation spectra from a one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single quantum well under a near-resonance condition between the N=2 subband and the Fermi level of the two-dimensional electron gas. Under such conditions, strong interaction between electrons at the Fermi edge and the exciton related to the N=2 subband can be observed. The Fermi-edge singularity (FES) is enhanced first, and then the FES and the N=2 exciton repel each other. Finally, the N=2 exciton is screened by excess electrons with increased excitation power. With an increase in temperature, the FES rapidly quenches, and the intensity of the N=2 exciton transition increases accompanied by a blueshift of its peak position.
Persistent Identifierhttp://hdl.handle.net/10722/174661
ISSN
2001 Impact Factor: 3.07
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorTang, XHen_US
dc.contributor.authorZhang, XHen_US
dc.date.accessioned2012-11-26T08:46:46Z-
dc.date.available2012-11-26T08:46:46Z-
dc.date.issued1996en_US
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 24, p. 17701-17704en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://hdl.handle.net/10722/174661-
dc.description.abstractWe have investigated photoluminescence and photoluminescence excitation spectra from a one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single quantum well under a near-resonance condition between the N=2 subband and the Fermi level of the two-dimensional electron gas. Under such conditions, strong interaction between electrons at the Fermi edge and the exciton related to the N=2 subband can be observed. The Fermi-edge singularity (FES) is enhanced first, and then the FES and the N=2 exciton repel each other. Finally, the N=2 exciton is screened by excess electrons with increased excitation power. With an increase in temperature, the FES rapidly quenches, and the intensity of the N=2 exciton transition increases accompanied by a blueshift of its peak position.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleStrong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum wellen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0005711410en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0005711410&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume54en_US
dc.identifier.issue24en_US
dc.identifier.spage17701en_US
dc.identifier.epage17704en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridTang, XH=37043381000en_US
dc.identifier.scopusauthoridZhang, XH=8543612300en_US

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