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Article: Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy

TitleReflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
Authors
Issue Date1994
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1994, v. 65 n. 24, p. 3066-3068 How to Cite?
AbstractReflection high-energy electron diffraction intensity oscillations during Ge heteroepitaxy on Si(100) have been observed using a gas source molecular beam epitaxy system. Intensity oscillations can be observed over 6 ML (monolayers) of growth in the temperature range 400-650°C. The oscillation frequency, however, varies from the first to subsequent layers and this variation is interpreted primarily as a change in the limiting growth kinetics as the surface composition changes from Si to Ge. Growth temperature and GeH4 flux dependence data indicate that the surface Ge concentration increases gradually, not abruptly, over the first several layers of deposition. Surface roughening effects which are attributed to Stranski-Krastanov type growth, are also found to contribute to the nonuniform oscillation frequency. © 1994 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174633
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorFernández, JMen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:46:37Z-
dc.date.available2012-11-26T08:46:37Z-
dc.date.issued1994en_US
dc.identifier.citationApplied Physics Letters, 1994, v. 65 n. 24, p. 3066-3068en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174633-
dc.description.abstractReflection high-energy electron diffraction intensity oscillations during Ge heteroepitaxy on Si(100) have been observed using a gas source molecular beam epitaxy system. Intensity oscillations can be observed over 6 ML (monolayers) of growth in the temperature range 400-650°C. The oscillation frequency, however, varies from the first to subsequent layers and this variation is interpreted primarily as a change in the limiting growth kinetics as the surface composition changes from Si to Ge. Growth temperature and GeH4 flux dependence data indicate that the surface Ge concentration increases gradually, not abruptly, over the first several layers of deposition. Surface roughening effects which are attributed to Stranski-Krastanov type growth, are also found to contribute to the nonuniform oscillation frequency. © 1994 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleReflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.112508en_US
dc.identifier.scopuseid_2-s2.0-0001160577en_US
dc.identifier.volume65en_US
dc.identifier.issue24en_US
dc.identifier.spage3066en_US
dc.identifier.epage3068en_US
dc.identifier.isiWOS:A1994PX05700010-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridFernández, JM=7404575272en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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