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Article: Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots

TitleEffects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
Authors
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 25, p. 3335-3337 How to Cite?
AbstractPostgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850°C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dots annealed at 850°C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850°C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174610
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T08:46:29Z-
dc.date.available2012-11-26T08:46:29Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 25, p. 3335-3337en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174610-
dc.description.abstractPostgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850°C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dots annealed at 850°C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850°C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleEffects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.121595en_US
dc.identifier.scopuseid_2-s2.0-0000348591en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000348591&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume72en_US
dc.identifier.issue25en_US
dc.identifier.spage3335en_US
dc.identifier.epage3337en_US
dc.identifier.isiWOS:000075274400032-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridWang, CH=8231951600en_US
dc.identifier.scopusauthoridFan, WJ=34770971100en_US
dc.identifier.scopusauthoridJiang, J=55228867800en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US

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