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  Patent History
  • Application
    US 11/890723 2004-07-14
  • Publication
    US 20060011831 2006-01-19
  • Granted
    US 7420166 2008-09-02
Supplementary

granted patent: Real-Time S-Parameter Imager

TitleReal-Time S-Parameter Imager
Granted PatentUS 7420166
Granted Date2008-09-02
Priority Date2004-07-14 US 11/890723
Inventors
Issue Date2008
Citation
US Patent 7420166. Washington, DC: US Patent and Trademark Office (USPTO), 2008 How to Cite?
AbstractDisclosed Is A Fully Automated System Capable Of Producing High Quality Real-Time S-Parameter Images. It Is A Useful And Versatile Tool In Material Science And Solid State Technology For Determining The Location Of Subsurface Defect Types And Concentrations In Bulk-Materials As Well As Thin-Films. The System Is Also Useful In Locating Top Surface Metallizations And Structures In Solid State Devices. This Imaging System Operates By Scanning The Sample Surface With Either A Small Positron Source (<22>Na) Or A Focused Positron Beam. The System Also Possesses Another Two Major Parts, Namely Electronic Instrumentation And Stand-Alone Imaging Software. In The System, The Processing Time And Use Of System Resources Are Constantly Monitored And Optimized For Producing High Resolution S-Parameter Image Of The Sample In Real Time With A General Purpose Personal Computer.; The System Software Possesses Special Features With Its Embedded Specialized Algorithms And Techniques That Provide The User With Adequate Freedom For Analyzing Various Aspects Of The Image In Order To Obtain A Clear Inference Of The Defect Profile While At The Same Time Keeping Automatic Track On The Instrumentation And Hardware Settings. The System Is Useful For Semiconductor And Metal Samples, Giving Excellent Quality Images Of The Subsurface Defect Profile And Has Applications For Biological Samples.
Persistent Identifierhttp://hdl.handle.net/10722/173822
References

 

DC FieldValueLanguage
dc.date.accessioned2012-11-02T06:19:27Z-
dc.date.available2012-11-02T06:19:27Z-
dc.date.issued2008-
dc.identifier.citationUS Patent 7420166. Washington, DC: US Patent and Trademark Office (USPTO), 2008en_HK
dc.identifier.urihttp://hdl.handle.net/10722/173822-
dc.description.abstractDisclosed Is A Fully Automated System Capable Of Producing High Quality Real-Time S-Parameter Images. It Is A Useful And Versatile Tool In Material Science And Solid State Technology For Determining The Location Of Subsurface Defect Types And Concentrations In Bulk-Materials As Well As Thin-Films. The System Is Also Useful In Locating Top Surface Metallizations And Structures In Solid State Devices. This Imaging System Operates By Scanning The Sample Surface With Either A Small Positron Source (<22>Na) Or A Focused Positron Beam. The System Also Possesses Another Two Major Parts, Namely Electronic Instrumentation And Stand-Alone Imaging Software. In The System, The Processing Time And Use Of System Resources Are Constantly Monitored And Optimized For Producing High Resolution S-Parameter Image Of The Sample In Real Time With A General Purpose Personal Computer.; The System Software Possesses Special Features With Its Embedded Specialized Algorithms And Techniques That Provide The User With Adequate Freedom For Analyzing Various Aspects Of The Image In Order To Obtain A Clear Inference Of The Defect Profile While At The Same Time Keeping Automatic Track On The Instrumentation And Hardware Settings. The System Is Useful For Semiconductor And Metal Samples, Giving Excellent Quality Images Of The Subsurface Defect Profile And Has Applications For Biological Samples.en_HK
dc.relation.isreferencedbyUS 2011284743 (A1) 2011-11-24en_HK
dc.relation.isreferencedbyUS 8148683 (B2) 2012-04-03en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documentsen_US
dc.titleReal-Time S-Parameter Imageren_HK
dc.typePatenten_US
dc.identifier.authorityBeling, CD:rp00660-
dc.description.naturepublished_or_final_versionen_US
dc.contributor.inventorNaik, Sabitru Pranab-
dc.contributor.inventorBeling, CD-
dc.contributor.inventorFung, H Y Stevenson-
patents.identifier.applicationUS 11/890723en_HK
patents.identifier.grantedUS 7420166en_HK
patents.description.assigneeUniv Hong Kong [Hk]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2006-01-19en_HK
patents.date.granted2008-09-02en_HK
dc.relation.referencesUS 3825759 (A) 1974-07-23en_HK
dc.relation.referencesUS 4064438 (A) 1977-12-20en_HK
dc.relation.referencesUS 6043489 (A) 2000-03-28en_HK
patents.identifier.hkutechidPhy-2004-00149-1en_HK
patents.date.application2004-07-14en_HK
patents.date.priority2004-07-14 US 11/890723en_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 20060011831en_HK
patents.relation.familyUS 2006011831 (A1) 2006-01-19en_HK
patents.relation.familyUS 7420166 (B2) 2008-09-02en_HK
patents.relation.familyUS 2007265789 (A1) 2007-11-15en_HK
patents.relation.familyUS 7781732 (B2) 2010-08-24en_HK
patents.relation.familyUS 2010322505 (A1) 2010-12-23en_HK
patents.relation.familyUS 8053724 (B2) 2011-11-08en_HK
patents.description.kindB2en_HK
patents.typePatent_granteden_HK

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