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Conference Paper: Growth of ultra thin ZnSe nanowires

TitleGrowth of ultra thin ZnSe nanowires
Authors
Issue Date2009
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2009, v. 1144, p. 1-6 How to Cite?
AbstractWe report here the growth of ultra thin ZnSe nanowires at low temperatures by Au-catalyzed molecule beam epitaxy and structural characterization of the nanowires. ZnSe nanowires may contain a high density of stacking faults and twins from low temperature growth and show a phase change from cubic to hexagonal structures. Ultra thin ZnSe nanowires can grow at a temperature below the eutectic point, and the relationship between the growth rates and nanowire diameters is V= l/dn+ C0 (C0 is a constant and n is a fitting parameter). The growth rate of the ultra thin nanowires at low temperatures can be elucidated based on the model involving interface incorporation and diffusion, in which the catalyst is solidified, and the nanowire growth is controlled through the diffusion of atoms into the interface between the catalyst and nanowire. The growth rate of ZnSe ultra thin nanowires has been simulated. © 2009 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/173453
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorWong, TLen_US
dc.contributor.authorCai, Yen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorSou, IKen_US
dc.contributor.authorWang, Nen_US
dc.date.accessioned2012-10-30T06:31:44Z-
dc.date.available2012-10-30T06:31:44Z-
dc.date.issued2009en_US
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2009, v. 1144, p. 1-6en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/173453-
dc.description.abstractWe report here the growth of ultra thin ZnSe nanowires at low temperatures by Au-catalyzed molecule beam epitaxy and structural characterization of the nanowires. ZnSe nanowires may contain a high density of stacking faults and twins from low temperature growth and show a phase change from cubic to hexagonal structures. Ultra thin ZnSe nanowires can grow at a temperature below the eutectic point, and the relationship between the growth rates and nanowire diameters is V= l/dn+ C0 (C0 is a constant and n is a fitting parameter). The growth rate of the ultra thin nanowires at low temperatures can be elucidated based on the model involving interface incorporation and diffusion, in which the catalyst is solidified, and the nanowire growth is controlled through the diffusion of atoms into the interface between the catalyst and nanowire. The growth rate of ZnSe ultra thin nanowires has been simulated. © 2009 Materials Research Society.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_US
dc.titleGrowth of ultra thin ZnSe nanowiresen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-70450078778en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70450078778&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume1144en_US
dc.identifier.spage1en_US
dc.identifier.epage6en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWong, TL=26321269800en_US
dc.identifier.scopusauthoridCai, Y=24823779900en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US
dc.identifier.scopusauthoridWang, N=7404340430en_US

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