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Article: MBE-Grown Cubic ZnS Nanowires

TitleMBE-Grown Cubic ZnS Nanowires
Authors
KeywordsCubic Zns
Molecular Beam Epitaxy
Nanowires
Photoluminescence
Issue Date2008
Citation
Journal Of Electronic Materials, 2008, v. 37 n. 9, p. 1433-1437 How to Cite?
AbstractUltrathin ZnS nanowires (NWs) were grown on a sapphire (0001) substrate at 430°C by the molecular-beam epitaxy (MBE) technique using self-assembled Au droplets as the catalyst. It was found that these NWs mainly consist of the cubic phase but a small portion was in the hexagonal phase. The analysis of the temperature-dependent band-edge (BE) emission of these NWs and that of a ZnS thin film revealed that the energy shift of the interband transition on temperature in ZnS is mainly attributed to the electron-phonon interactions. The observed blue shift of the BE emission of ZnS NWs could be quantitatively explained by the confinement of the excited excitons in the NW geometry. © 2008 TMS.
Persistent Identifierhttp://hdl.handle.net/10722/171953
ISSN
2015 Impact Factor: 1.491
2015 SCImago Journal Rankings: 0.609
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, SKen_US
dc.contributor.authorLok, SKen_US
dc.contributor.authorWang, Gen_US
dc.contributor.authorCai, Yen_US
dc.contributor.authorWang, Nen_US
dc.contributor.authorWong, KSen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:46Z-
dc.date.available2012-10-30T06:18:46Z-
dc.date.issued2008en_US
dc.identifier.citationJournal Of Electronic Materials, 2008, v. 37 n. 9, p. 1433-1437en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/10722/171953-
dc.description.abstractUltrathin ZnS nanowires (NWs) were grown on a sapphire (0001) substrate at 430°C by the molecular-beam epitaxy (MBE) technique using self-assembled Au droplets as the catalyst. It was found that these NWs mainly consist of the cubic phase but a small portion was in the hexagonal phase. The analysis of the temperature-dependent band-edge (BE) emission of these NWs and that of a ZnS thin film revealed that the energy shift of the interband transition on temperature in ZnS is mainly attributed to the electron-phonon interactions. The observed blue shift of the BE emission of ZnS NWs could be quantitatively explained by the confinement of the excited excitons in the NW geometry. © 2008 TMS.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.subjectCubic Znsen_US
dc.subjectMolecular Beam Epitaxyen_US
dc.subjectNanowiresen_US
dc.subjectPhotoluminescenceen_US
dc.titleMBE-Grown Cubic ZnS Nanowiresen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s11664-008-0381-zen_US
dc.identifier.scopuseid_2-s2.0-51849111631en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-51849111631&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume37en_US
dc.identifier.issue9en_US
dc.identifier.spage1433en_US
dc.identifier.epage1437en_US
dc.identifier.isiWOS:000259042100041-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridLok, SK=22634672200en_US
dc.identifier.scopusauthoridWang, G=35202228100en_US
dc.identifier.scopusauthoridCai, Y=24823779900en_US
dc.identifier.scopusauthoridWang, N=7404340430en_US
dc.identifier.scopusauthoridWong, KS=7404759949en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

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