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Article: Control of growth orientation for epitaxially grown ZnSe nanowires

TitleControl of growth orientation for epitaxially grown ZnSe nanowires
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 1 How to Cite?
AbstractZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-beam epitaxy via the vapor-liquid-solid reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. Through detailed transmission electron microscopy studies, it was found that 〈111〉 orientation is the growth direction for NWs with size ≥30 nm, while NWs with size around 10 nm prefer to grow along the 〈110〉 direction, with a small portion along the 〈112〉 direction. These observations have led to the realization of vertical ZnSe NWs with size around 10 nm grown on a GaAs(110) substrate. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/171935
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, SKen_US
dc.contributor.authorCai, Yen_US
dc.contributor.authorWang, Nen_US
dc.contributor.authorSou, IKen_US
dc.date.accessioned2012-10-30T06:18:35Z-
dc.date.available2012-10-30T06:18:35Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 1en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/171935-
dc.description.abstractZnSe nanowires (NWs) were grown on (111), (100), and (110)-oriented GaAs substrates by molecular-beam epitaxy via the vapor-liquid-solid reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. Through detailed transmission electron microscopy studies, it was found that 〈111〉 orientation is the growth direction for NWs with size ≥30 nm, while NWs with size around 10 nm prefer to grow along the 〈110〉 direction, with a small portion along the 〈112〉 direction. These observations have led to the realization of vertical ZnSe NWs with size around 10 nm grown on a GaAs(110) substrate. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleControl of growth orientation for epitaxially grown ZnSe nanowiresen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2161397en_US
dc.identifier.scopuseid_2-s2.0-33645531883en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645531883&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume88en_US
dc.identifier.issue1en_US
dc.identifier.isiWOS:000234428100071-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridCai, Y=24823779900en_US
dc.identifier.scopusauthoridWang, N=7404340430en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US

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