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Article: ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

TitleZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy
Authors
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 13, p. 2665-2667 How to Cite?
AbstractThe molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.
Persistent Identifierhttp://hdl.handle.net/10722/171916
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, YFen_US
dc.contributor.authorDuan, XFen_US
dc.contributor.authorChan, SKen_US
dc.contributor.authorSou, IKen_US
dc.contributor.authorZhang, XXen_US
dc.contributor.authorWang, Nen_US
dc.date.accessioned2012-10-30T06:18:24Z-
dc.date.available2012-10-30T06:18:24Z-
dc.date.issued2003en_US
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 13, p. 2665-2667en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/171916-
dc.description.abstractThe molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailChan, SK:kwsherry@hku.hken_US
dc.identifier.authorityChan, SK=rp00539en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1615293en_US
dc.identifier.scopuseid_2-s2.0-0142120586en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0142120586&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume83en_US
dc.identifier.issue13en_US
dc.identifier.spage2665en_US
dc.identifier.epage2667en_US
dc.identifier.isiWOS:000185521400055-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, YF=26425604500en_US
dc.identifier.scopusauthoridDuan, XF=7202709043en_US
dc.identifier.scopusauthoridChan, SK=26424509100en_US
dc.identifier.scopusauthoridSou, IK=7005758902en_US
dc.identifier.scopusauthoridZhang, XX=36044634000en_US
dc.identifier.scopusauthoridWang, N=7404340430en_US

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