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Article: Zn-doped p-type gallium phosphide nanowire photocathodes from a surfactant-free solution synthesis

TitleZn-doped p-type gallium phosphide nanowire photocathodes from a surfactant-free solution synthesis
Authors
Liu, CSun, JTang, JYang, P
KeywordsGallium Phosphide
Nanowire
Photoelectrochemistry
Surfactant-Free Solution Synthesis
Issue Date2012
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanolett
Citation
Nano Letters, 2012, v. 12 n. 10, p. 5407-5411 How to Cite?
DOI: http://dx.doi.org/10.1021/nl3028729
AbstractGallium phosphide (GaP) nanowire photocathodes synthesized using a surfactant-free solution-liquid-solid (SLS) method were investigated for their photoelectrochemical evolution of hydrogen. Zinc as a p-type dopant was introduced into the nanowires during synthesis to optimize the photocathodes response. Investigation of the electrical properties of Zn-doped GaP nanowires confirmed their p-type conductivity. After optimization of the nanowire diameter and Zn doping concentration, higher absorbed photon-to-current efficiency (APCE) over the spectrum was achieved. The versatility of the SLS synthesis and the capability to control the electrical properties suggest that our approach could be generalized to other III-V and II-VI semiconductors. © 2012 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/169608
ISSN
1530-6984
2021 Impact Factor: 12.262
2020 SCImago Journal Rankings: 4.853
ISI Accession Number ID
WOS:000309615000055
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Cen_US
dc.contributor.authorSun, Jen_US
dc.contributor.authorTang, Jen_US
dc.contributor.authorYang, Pen_US
dc.date.accessioned2012-10-25T04:53:39Z-
dc.date.available2012-10-25T04:53:39Z-
dc.date.issued2012en_US
dc.identifier.citationNano Letters, 2012, v. 12 n. 10, p. 5407-5411en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://hdl.handle.net/10722/169608-
dc.description.abstractGallium phosphide (GaP) nanowire photocathodes synthesized using a surfactant-free solution-liquid-solid (SLS) method were investigated for their photoelectrochemical evolution of hydrogen. Zinc as a p-type dopant was introduced into the nanowires during synthesis to optimize the photocathodes response. Investigation of the electrical properties of Zn-doped GaP nanowires confirmed their p-type conductivity. After optimization of the nanowire diameter and Zn doping concentration, higher absorbed photon-to-current efficiency (APCE) over the spectrum was achieved. The versatility of the SLS synthesis and the capability to control the electrical properties suggest that our approach could be generalized to other III-V and II-VI semiconductors. © 2012 American Chemical Society.en_US
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanoletten_US
dc.relation.ispartofNano Lettersen_US
dc.subjectGallium Phosphideen_US
dc.subjectNanowireen_US
dc.subjectPhotoelectrochemistryen_US
dc.subjectSurfactant-Free Solution Synthesisen_US
dc.titleZn-doped p-type gallium phosphide nanowire photocathodes from a surfactant-free solution synthesisen_US
dc.typeArticleen_US
dc.identifier.emailTang, J: jinyao@hku.hken_US
dc.identifier.authorityTang, J=rp01677en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1021/nl3028729en_US
dc.identifier.pmid23025657-
dc.identifier.scopuseid_2-s2.0-84867460153en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84867460153&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume12en_US
dc.identifier.issue10en_US
dc.identifier.spage5407en_US
dc.identifier.epage5411en_US
dc.identifier.isiWOS:000309615000055-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, C=52063621000en_US
dc.identifier.scopusauthoridSun, J=26531956400en_US
dc.identifier.scopusauthoridTang, J=12791614900en_US
dc.identifier.scopusauthoridYang, P=7403931988en_US
dc.identifier.issnl1530-6984-

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