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Article: Enhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surface

TitleEnhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surface
Authors
KeywordsOrganic Thin-Film Transistor
Pentacene
Surface Treatment
Issue Date2008
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2008, v. 254 n. 23, p. 7688-7692 How to Cite?
AbstractA reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm2/(V s) to 0.22 cm2/(V s), and a threshold voltage reduction from -14.0 V to -9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx. © 2008 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/168323
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTang, JXen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorChan, MYen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2012-10-08T03:17:33Z-
dc.date.available2012-10-08T03:17:33Z-
dc.date.issued2008en_US
dc.identifier.citationApplied Surface Science, 2008, v. 254 n. 23, p. 7688-7692en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://hdl.handle.net/10722/168323-
dc.description.abstractA reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm2/(V s) to 0.22 cm2/(V s), and a threshold voltage reduction from -14.0 V to -9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx. © 2008 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.subjectOrganic Thin-Film Transistoren_US
dc.subjectPentaceneen_US
dc.subjectSurface Treatmenten_US
dc.titleEnhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surfaceen_US
dc.typeArticleen_US
dc.identifier.emailChan, MY:chanmym@hku.hken_US
dc.identifier.authorityChan, MY=rp00666en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.apsusc.2007.12.067en_US
dc.identifier.scopuseid_2-s2.0-51149222086en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-51149222086&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume254en_US
dc.identifier.issue23en_US
dc.identifier.spage7688en_US
dc.identifier.epage7692en_US
dc.identifier.isiWOS:000259172600037-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridTang, JX=7404638417en_US
dc.identifier.scopusauthoridLee, CS=8091195900en_US
dc.identifier.scopusauthoridChan, MY=7402597725en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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