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Article: Charge generation layer in stacked organic light-emitting devices

TitleCharge generation layer in stacked organic light-emitting devices
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2008, v. 104 n. 3 How to Cite?
AbstractThree types of organic-based connection units were examined for use in stacked or tandem organic light-emitting devices, which include (i) Mg-doped tris(8-hydrooxyquinoline) aluminum(III) (Al q3) 4, 4′, 4″ -tris{ N,-(3-methylphenyl)- N -phenylamino}-triphenylamine (m -MTDATA), (ii) Al q3 /tetrafluorotetracyanoquinodimethane (F4-TCNQ)-doped m -MTDATA, and (iii) Mg-doped Al q3 /F4-TCNQ-doped m -MTDATA. Device (iii) shows the highest current efficiency and the differences in device performance can be correlated with the electronic structure of the connection unit and its interface with the neighboring active layers. The working mechanisms of the connection-unit works are discussed in terms of band bending and charge carrier density. The electronic structures of the interface between layers in a connection unit are of particular importance to the device performance. Dopings of Mg in Al q3 and F4-TCNQ in m -MTDATA led to bipolar heterojunction. Removal of either the n -type or the p -type dopants suppresses the band bending and the formation of space charge regions. The charge density accumulated at this interface estimated from Poisson's equation is 1018 cm3, which is respectively 12 and 6 orders of magnitude higher than that in the Mg:Al q3 / m -MTDATA and Al q3 /F4-TCNQ: m -MTDATA connection units. Based on these results, the critical roles of dopants in an efficient connecting unit for stacked organic light-emitting diodes are elucidated. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/168318
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, MKen_US
dc.contributor.authorLau, KMen_US
dc.contributor.authorLai, SLen_US
dc.contributor.authorLaw, CWen_US
dc.contributor.authorChan, MYen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2012-10-08T03:17:29Z-
dc.date.available2012-10-08T03:17:29Z-
dc.date.issued2008en_US
dc.identifier.citationJournal Of Applied Physics, 2008, v. 104 n. 3en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/168318-
dc.description.abstractThree types of organic-based connection units were examined for use in stacked or tandem organic light-emitting devices, which include (i) Mg-doped tris(8-hydrooxyquinoline) aluminum(III) (Al q3) 4, 4′, 4″ -tris{ N,-(3-methylphenyl)- N -phenylamino}-triphenylamine (m -MTDATA), (ii) Al q3 /tetrafluorotetracyanoquinodimethane (F4-TCNQ)-doped m -MTDATA, and (iii) Mg-doped Al q3 /F4-TCNQ-doped m -MTDATA. Device (iii) shows the highest current efficiency and the differences in device performance can be correlated with the electronic structure of the connection unit and its interface with the neighboring active layers. The working mechanisms of the connection-unit works are discussed in terms of band bending and charge carrier density. The electronic structures of the interface between layers in a connection unit are of particular importance to the device performance. Dopings of Mg in Al q3 and F4-TCNQ in m -MTDATA led to bipolar heterojunction. Removal of either the n -type or the p -type dopants suppresses the band bending and the formation of space charge regions. The charge density accumulated at this interface estimated from Poisson's equation is 1018 cm3, which is respectively 12 and 6 orders of magnitude higher than that in the Mg:Al q3 / m -MTDATA and Al q3 /F4-TCNQ: m -MTDATA connection units. Based on these results, the critical roles of dopants in an efficient connecting unit for stacked organic light-emitting diodes are elucidated. © 2008 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleCharge generation layer in stacked organic light-emitting devicesen_US
dc.typeArticleen_US
dc.identifier.emailChan, MY:chanmym@hku.hken_US
dc.identifier.authorityChan, MY=rp00666en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2942408en_US
dc.identifier.scopuseid_2-s2.0-49749084763en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-49749084763&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume104en_US
dc.identifier.issue3en_US
dc.identifier.isiWOS:000258493900146-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFung, MK=7101955091en_US
dc.identifier.scopusauthoridLau, KM=7401559812en_US
dc.identifier.scopusauthoridLai, SL=7402937153en_US
dc.identifier.scopusauthoridLaw, CW=25630755700en_US
dc.identifier.scopusauthoridChan, MY=7402597725en_US
dc.identifier.scopusauthoridLee, CS=7410145384en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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