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Article: Efficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing

TitleEfficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing
Authors
Issue Date2003
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett
Citation
Chemical Physics Letters, 2003, v. 371 n. 5-6, p. 700-706 How to Cite?
AbstractDevice stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ 3 interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs. © 2003 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/167782
ISSN
2015 Impact Factor: 1.86
2015 SCImago Journal Rankings: 0.757
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, MYen_US
dc.contributor.authorLai, SLen_US
dc.contributor.authorWong, FLen_US
dc.contributor.authorLengyel, Oen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2012-10-08T03:11:31Z-
dc.date.available2012-10-08T03:11:31Z-
dc.date.issued2003en_US
dc.identifier.citationChemical Physics Letters, 2003, v. 371 n. 5-6, p. 700-706en_US
dc.identifier.issn0009-2614en_US
dc.identifier.urihttp://hdl.handle.net/10722/167782-
dc.description.abstractDevice stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ 3 interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs. © 2003 Elsevier Science B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cpletten_US
dc.relation.ispartofChemical Physics Lettersen_US
dc.titleEfficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processingen_US
dc.typeArticleen_US
dc.identifier.emailChan, MY:chanmym@hku.hken_US
dc.identifier.authorityChan, MY=rp00666en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0009-2614(03)00310-5en_US
dc.identifier.scopuseid_2-s2.0-0037436929en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037436929&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume371en_US
dc.identifier.issue5-6en_US
dc.identifier.spage700en_US
dc.identifier.epage706en_US
dc.identifier.isiWOS:000182103200029-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridChan, MY=7402597725en_US
dc.identifier.scopusauthoridLai, SL=7402937153en_US
dc.identifier.scopusauthoridWong, FL=7201409637en_US
dc.identifier.scopusauthoridLengyel, O=6506267571en_US
dc.identifier.scopusauthoridLee, CS=35364273600en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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