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Conference Paper: Silicon grain boundary passivation for photovoltaics: a novel approach with small polar molecules

TitleSilicon grain boundary passivation for photovoltaics: a novel approach with small polar molecules
Authors
KeywordsGrain boundaries
Photovoltaic cells
Silicon
Passivation
Conductivity
Issue Date2012
PublisherIEEE.
Citation
The 38th IEEE Photovoltaic Specialists Conference (PVSC), Austin Cenvention Centre, Austin, Texas, USA, 3-8 June 2012. In Conference Record, 2012, p. 001144 - 001148 How to Cite?
AbstractGrain boundaries (GBs) play a major role in determining the device performance of in particular polycrystalline thin film solar cells including Si, CdTe and CIGS. Hydrogen passivation has been traditionally applied to passivate the defects at GBs. However, hydrogenated films such as amorphous silicon (a-Si:H) and microcrystalline silicon (c-Si:H) are subject to light-induced degradation effects. In this study on multicrystalline (mc)-Si wafers, we found an excellent correlation between the grain misorientation and the corresponding electrical resistivity across grain boundaries. In particular, the charge transport across GBs was greatly enhanced after the wafers were properly treated in our polar molecule solutions. The results were explained to be due to the more effective charge neutralization and passivation of polar molecules on localized charges at GBs. These findings may help us achieve high-quality materials at low cost for high-efficiency solar cells by improving the carrier transport and minimizing the carrier recombination. We also believe that this study will help us with a deeper understanding on GBs and their behaviors for the applications not only in photovoltaics, but also in other solid-state devices such as thin-film transistors. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/166909
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWang, Wen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorLiu, Fen_US
dc.contributor.authorYan, Fen_US
dc.contributor.authorJohnston, Sen_US
dc.contributor.authorAl-Jassim, Men_US
dc.date.accessioned2012-09-21T01:43:33Z-
dc.date.available2012-09-21T01:43:33Z-
dc.date.issued2012en_US
dc.identifier.citationThe 38th IEEE Photovoltaic Specialists Conference (PVSC), Austin Cenvention Centre, Austin, Texas, USA, 3-8 June 2012. In Conference Record, 2012, p. 001144 - 001148en_US
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/10722/166909-
dc.description.abstractGrain boundaries (GBs) play a major role in determining the device performance of in particular polycrystalline thin film solar cells including Si, CdTe and CIGS. Hydrogen passivation has been traditionally applied to passivate the defects at GBs. However, hydrogenated films such as amorphous silicon (a-Si:H) and microcrystalline silicon (c-Si:H) are subject to light-induced degradation effects. In this study on multicrystalline (mc)-Si wafers, we found an excellent correlation between the grain misorientation and the corresponding electrical resistivity across grain boundaries. In particular, the charge transport across GBs was greatly enhanced after the wafers were properly treated in our polar molecule solutions. The results were explained to be due to the more effective charge neutralization and passivation of polar molecules on localized charges at GBs. These findings may help us achieve high-quality materials at low cost for high-efficiency solar cells by improving the carrier transport and minimizing the carrier recombination. We also believe that this study will help us with a deeper understanding on GBs and their behaviors for the applications not only in photovoltaics, but also in other solid-state devices such as thin-film transistors. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofIEEE Photovoltaic Specialists Conference. Conference Recorden_US
dc.rightsIEEE Photovoltaic Specialists Conference. Conference Record. Copyright © IEEE.-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectGrain boundaries-
dc.subjectPhotovoltaic cells-
dc.subjectSilicon-
dc.subjectPassivation-
dc.subjectConductivity-
dc.titleSilicon grain boundary passivation for photovoltaics: a novel approach with small polar moleculesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLiu, F: fordliu@hku.hken_US
dc.identifier.authorityLiu, F=rp01358en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/PVSC.2012.6317804-
dc.identifier.scopuseid_2-s2.0-84869408702-
dc.identifier.hkuros210400en_US
dc.identifier.spage001144-
dc.identifier.epage001148-
dc.publisher.placeUnited States-
dc.description.otherThe 38th IEEE Photovoltaic Specialists Conference (PVSC), Austin Cenvention Centre, Austin, Texas, USA, 3-8 June 2012. In Conference Record, 2012, p. 001144 - 001148-

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