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Conference Paper: Fast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation
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TitleFast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation
 
AuthorsHuang, J
Chew, WC
Tang, M
Jiang, L
Yin, WY
 
KeywordsAsymptotic waveform evaluation (AWE)
Complex frequency hopping (CFH)
Silicon nanowire
FinFET
Quantum transport
Surface roughness
Nano-MOSFETs
 
Issue Date2012
 
PublisherCurran Associates, Inc..
 
CitationThe 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655 [How to Cite?]
 
AbstractFull three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness.
 
DescriptionSession - Multi-Physics Modeling and Simulations
 
ISBN9781622762385
 
DC FieldValue
dc.contributor.authorHuang, J
 
dc.contributor.authorChew, WC
 
dc.contributor.authorTang, M
 
dc.contributor.authorJiang, L
 
dc.contributor.authorYin, WY
 
dc.date.accessioned2012-09-20T08:16:19Z
 
dc.date.available2012-09-20T08:16:19Z
 
dc.date.issued2012
 
dc.description.abstractFull three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness.
 
dc.descriptionSession - Multi-Physics Modeling and Simulations
 
dc.identifier.citationThe 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655 [How to Cite?]
 
dc.identifier.epage655
 
dc.identifier.hkuros207533
 
dc.identifier.isbn9781622762385
 
dc.identifier.spage651
 
dc.identifier.urihttp://hdl.handle.net/10722/165210
 
dc.identifier.volume2
 
dc.languageeng
 
dc.publisherCurran Associates, Inc..
 
dc.publisher.placeUnited States
 
dc.relation.ispartof28th Annual Review of Progress in Applied Computational Electromagnetics 2012: proceedings
 
dc.subjectAsymptotic waveform evaluation (AWE)
 
dc.subjectComplex frequency hopping (CFH)
 
dc.subjectSilicon nanowire
 
dc.subjectFinFET
 
dc.subjectQuantum transport
 
dc.subjectSurface roughness
 
dc.subjectNano-MOSFETs
 
dc.titleFast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation
 
dc.typeConference_Paper
 
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<contributor.author>Chew, WC</contributor.author>
<contributor.author>Tang, M</contributor.author>
<contributor.author>Jiang, L</contributor.author>
<contributor.author>Yin, WY</contributor.author>
<date.accessioned>2012-09-20T08:16:19Z</date.accessioned>
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<description.abstract>Full three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness.</description.abstract>
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<subject>Silicon nanowire</subject>
<subject>FinFET</subject>
<subject>Quantum transport</subject>
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<subject>Nano-MOSFETs</subject>
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