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Conference Paper: Fast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation

TitleFast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation
Authors
KeywordsAsymptotic waveform evaluation (AWE)
Complex frequency hopping (CFH)
Silicon nanowire
FinFET
Quantum transport
Surface roughness
Nano-MOSFETs
Issue Date2012
PublisherCurran Associates, Inc..
Citation
The 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655 How to Cite?
Abstract
Full three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness.
DescriptionSession - Multi-Physics Modeling and Simulations
Persistent Identifierhttp://hdl.handle.net/10722/165210
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHuang, Jen_US
dc.contributor.authorChew, WCen_US
dc.contributor.authorTang, Men_US
dc.contributor.authorJiang, Len_US
dc.contributor.authorYin, WYen_US
dc.date.accessioned2012-09-20T08:16:19Z-
dc.date.available2012-09-20T08:16:19Z-
dc.date.issued2012en_US
dc.identifier.citationThe 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655en_US
dc.identifier.isbn9781622762385-
dc.identifier.urihttp://hdl.handle.net/10722/165210-
dc.descriptionSession - Multi-Physics Modeling and Simulations-
dc.description.abstractFull three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness.-
dc.languageengen_US
dc.publisherCurran Associates, Inc..-
dc.relation.ispartof28th Annual Review of Progress in Applied Computational Electromagnetics 2012: proceedingsen_US
dc.subjectAsymptotic waveform evaluation (AWE)-
dc.subjectComplex frequency hopping (CFH)-
dc.subjectSilicon nanowire-
dc.subjectFinFET-
dc.subjectQuantum transport-
dc.subjectSurface roughness-
dc.subjectNano-MOSFETs-
dc.titleFast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluationen_US
dc.typeConference_Paperen_US
dc.identifier.emailChew, WC: wcchew@hku.hken_US
dc.identifier.emailJiang, L: jianglj@hku.hken_US
dc.identifier.authorityChew, WC=rp00656en_US
dc.identifier.authorityJiang, L=rp01338en_US
dc.identifier.hkuros207533en_US
dc.identifier.volume2-
dc.identifier.spage651-
dc.identifier.epage655-
dc.publisher.placeUnited States-

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