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Article: Nitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications

TitleNitrided La 2O 3 as charge-trapping layer for nonvolatile memory applications
Authors
KeywordsCharge-Trapping Layer (Ctl)
High-K Dielectric
Metal-Oxide-Nitride-Oxide- Silicon (Monos)
Nitrided La 2O 3
Nonvolatile Memory
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 2, p. 306-310 How to Cite?
AbstractCharge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155768
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:35:15Z-
dc.date.available2012-08-08T08:35:15Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 2, p. 306-310en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155768-
dc.description.abstractCharge-trapping characteristics of La 2O 3 with and without nitrogen incorporation were investigated based on Al/Al 2O 3/La 2O 3/SiO 2Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La 2O 3 as charge-trapping layer, the one with nitrided La 2O 3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La 2O 3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation. © 2012 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCharge-Trapping Layer (Ctl)en_US
dc.subjectHigh-K Dielectricen_US
dc.subjectMetal-Oxide-Nitride-Oxide- Silicon (Monos)en_US
dc.subjectNitrided La 2O 3en_US
dc.subjectNonvolatile Memoryen_US
dc.titleNitrided La 2O 3 as charge-trapping layer for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2011.2182197en_US
dc.identifier.scopuseid_2-s2.0-84862019150en_US
dc.identifier.hkuros225747-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862019150&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume12en_US
dc.identifier.issue2en_US
dc.identifier.spage306en_US
dc.identifier.epage310en_US
dc.identifier.isiWOS:000305085100015-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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