File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Nitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications

TitleNitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applications
Authors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 24, article no. 242905 How to Cite?
AbstractCharge-trapping characteristics of SrTiO 3 with and without nitrogen incorporation were investigated based on Al/ Al 2 O 3/SrTiO 3/SiO 2 /Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO 3/SiO 2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO 3 as charge-trapping layer (CTL), the one with nitrided SrTiO 3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 10 4s), due to the nitrided SrTiO 3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO 2 by nitrogen passivation. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155634
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, JPen_US
dc.date.accessioned2012-08-08T08:34:29Z-
dc.date.available2012-08-08T08:34:29Z-
dc.date.issued2011en_US
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 24, article no. 242905en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155634-
dc.description.abstractCharge-trapping characteristics of SrTiO 3 with and without nitrogen incorporation were investigated based on Al/ Al 2 O 3/SrTiO 3/SiO 2 /Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO 3/SiO 2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO 3 as charge-trapping layer (CTL), the one with nitrided SrTiO 3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 10 4s), due to the nitrided SrTiO 3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO 2 by nitrogen passivation. © 2011 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics-
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 24, article no. 242905 and may be found at http://scitation.aip.org.eproxy2.lib.hku.hk/content/aip/journal/apl/98/24/10.1063/1.3601473-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleNitrided SrTiO 3 as charge-trapping layer for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3601473en_US
dc.identifier.scopuseid_2-s2.0-79960569965en_US
dc.identifier.hkuros225730-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960569965&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume98en_US
dc.identifier.issue24en_US
dc.identifier.isiWOS:000291803600066-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLiu, L=45961196100en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats