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Article: X-ray diffraction study of the optimization of MgO growth conditions for magnetic tunnel junctions

TitleX-ray diffraction study of the optimization of MgO growth conditions for magnetic tunnel junctions
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2008, v. 103 n. 7 How to Cite?
AbstractWe have carried out a systematic study optimizing the MgO growth via preparation and sputtering conditions and underlayer structures. It was found that to prevent water vapor which is detrimental to MgO (200) growth, the chamber pressure needs to be reduced below 10-8 Torr. Simple underlayers such as 5 nm CoFeB tend to give better MgO, but we have also succeeded in growing MgO on more complicated underlayers such as 1 Ta/20 Au/5 Co40 Fe40 B20 and 1 Ta/20 conetic (Ni77 Fe14 Cu5 Mo4) 1.5 Co40 Fe40 B20 (units in nanometers). We accomplished this by extensive baking of the deposition chamber and use of Ti-getter films. Short sputtering distance and high sputtering power were found to optimize MgO deposition. We found that both preparation and sputtering conditions have important effects on the MgO growth. X-ray diffraction analysis was used as the characterization tool for optimizing the MgO growth conditions. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155455
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorO, SYen_US
dc.contributor.authorLee, CGen_US
dc.contributor.authorShapiro, AJen_US
dc.contributor.authorEgelhoff Jr, WFen_US
dc.contributor.authorVaudin, MDen_US
dc.contributor.authorRuglovsky, JLen_US
dc.contributor.authorMallett, Jen_US
dc.contributor.authorPong, PWTen_US
dc.date.accessioned2012-08-08T08:33:34Z-
dc.date.available2012-08-08T08:33:34Z-
dc.date.issued2008en_US
dc.identifier.citationJournal Of Applied Physics, 2008, v. 103 n. 7en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155455-
dc.description.abstractWe have carried out a systematic study optimizing the MgO growth via preparation and sputtering conditions and underlayer structures. It was found that to prevent water vapor which is detrimental to MgO (200) growth, the chamber pressure needs to be reduced below 10-8 Torr. Simple underlayers such as 5 nm CoFeB tend to give better MgO, but we have also succeeded in growing MgO on more complicated underlayers such as 1 Ta/20 Au/5 Co40 Fe40 B20 and 1 Ta/20 conetic (Ni77 Fe14 Cu5 Mo4) 1.5 Co40 Fe40 B20 (units in nanometers). We accomplished this by extensive baking of the deposition chamber and use of Ti-getter films. Short sputtering distance and high sputtering power were found to optimize MgO deposition. We found that both preparation and sputtering conditions have important effects on the MgO growth. X-ray diffraction analysis was used as the characterization tool for optimizing the MgO growth conditions. © 2008 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleX-ray diffraction study of the optimization of MgO growth conditions for magnetic tunnel junctionsen_US
dc.typeArticleen_US
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2836405en_US
dc.identifier.scopuseid_2-s2.0-42349107582en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42349107582&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume103en_US
dc.identifier.issue7en_US
dc.identifier.isiWOS:000255043200176-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridO, SY=16025115600en_US
dc.identifier.scopusauthoridLee, CG=16318947400en_US
dc.identifier.scopusauthoridShapiro, AJ=16449846600en_US
dc.identifier.scopusauthoridEgelhoff Jr, WF=7006151986en_US
dc.identifier.scopusauthoridVaudin, MD=7006138033en_US
dc.identifier.scopusauthoridRuglovsky, JL=6507875823en_US
dc.identifier.scopusauthoridMallett, J=7003923229en_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US

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