Article: ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
| Title | ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Authors | Chen, X1 Man Ching Ng, A1 2 Fang, F1 Hang Ng, Y1 Djurišić, AB1 Lam Tam, H3 Wai Cheah, K3 Gwo, S4 Kin Chan, W1 Wai Keung Fong, P5 Fei Lui, H5 Surya, C5 | ||||||||
| Keywords | Cathodoluminescence spectroscopy Identical conditions Luminescence peak Reverse bias Thin-film structure | ||||||||
| Issue Date | 2011 | ||||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||||
| Citation | Journal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3653835 | ||||||||
| Abstract | ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics. | ||||||||
| ISSN | 0021-8979 2011 Impact Factor: 2.168 2011 SCImago Journal Rankings: 0.139 | ||||||||
| DOI | http://dx.doi.org/10.1063/1.3653835 | ||||||||
| ISI Accession Number ID | WOS:000297062100123
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant, (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund Grant No. ITS/129/08 is acknowledged. | ||||||||
| References | References in Scopus | ||||||||
| Grants | Light Emitting Diodes Fabricated by Electrochemical Methods |
| dc.contributor.author | Chen, X | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| dc.contributor.author | Man Ching Ng, A | ||||||||
| dc.contributor.author | Fang, F | ||||||||
| dc.contributor.author | Hang Ng, Y | ||||||||
| dc.contributor.author | Djurišić, AB | ||||||||
| dc.contributor.author | Lam Tam, H | ||||||||
| dc.contributor.author | Wai Cheah, K | ||||||||
| dc.contributor.author | Gwo, S | ||||||||
| dc.contributor.author | Kin Chan, W | ||||||||
| dc.contributor.author | Wai Keung Fong, P | ||||||||
| dc.contributor.author | Fei Lui, H | ||||||||
| dc.contributor.author | Surya, C | ||||||||
| dc.date.accessioned | 2011-12-21T08:47:56Z | ||||||||
| dc.date.available | 2011-12-21T08:47:56Z | ||||||||
| dc.date.issued | 2011 | ||||||||
| dc.description.abstract | ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics. | ||||||||
| dc.description.grant | Light Emitting Diodes Fabricated by Electrochemical Methods | ||||||||
| dc.description.grantcode | 100446 | ||||||||
| dc.description.nature | published_or_final_version | ||||||||
| dc.identifier.citation | Journal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3653835 | ||||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3653835 | ||||||||
| dc.identifier.hkuros | 198039 | ||||||||
| dc.identifier.isi | WOS:000297062100123
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant, (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund Grant No. ITS/129/08 is acknowledged. | ||||||||
| dc.identifier.issn | 0021-8979 2011 Impact Factor: 2.168 2011 SCImago Journal Rankings: 0.139 | ||||||||
| dc.identifier.issue | 9 | ||||||||
| dc.identifier.scopus | eid_2-s2.0-81355142776 | ||||||||
| dc.identifier.uri | http://hdl.handle.net/10722/143737 | ||||||||
| dc.identifier.volume | 110 | ||||||||
| dc.language | eng | ||||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||||
| dc.publisher.place | United States | ||||||||
| dc.relation.ispartof | Journal of Applied Physics | ||||||||
| dc.relation.references | References in Scopus | ||||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||||
| dc.rights | Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 094513) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p094513_s1). | ||||||||
| dc.subject | Cathodoluminescence spectroscopy | ||||||||
| dc.subject | Identical conditions | ||||||||
| dc.subject | Luminescence peak | ||||||||
| dc.subject | Reverse bias | ||||||||
| dc.subject | Thin-film structure | ||||||||
| dc.title | ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias | ||||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Science and Technology of China
- Hong Kong Baptist University
- National Tsing Hua University
- Hong Kong Polytechnic University