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Article: ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
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TitleZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
 
AuthorsChen, X1
Man Ching Ng, A1 2
Fang, F1
Hang Ng, Y1
Djurišić, AB1
Lam Tam, H3
Wai Cheah, K3
Gwo, S5
Kin Chan, W1
Wai Keung Fong, P4
Fei Lui, H4
Surya, C4
 
KeywordsCathodoluminescence spectroscopy
Identical conditions
Luminescence peak
Reverse bias
Thin-film structure
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3653835
 
AbstractZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics.
 
ISSN0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
DOIhttp://dx.doi.org/10.1063/1.3653835
 
ISI Accession Number IDWOS:000297062100123
Funding AgencyGrant Number
University of Hong Kong
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant, (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund Grant No. ITS/129/08 is acknowledged.

 
ReferencesReferences in Scopus
 
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
 
DC FieldValue
dc.contributor.authorChen, X
 
dc.contributor.authorMan Ching Ng, A
 
dc.contributor.authorFang, F
 
dc.contributor.authorHang Ng, Y
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorLam Tam, H
 
dc.contributor.authorWai Cheah, K
 
dc.contributor.authorGwo, S
 
dc.contributor.authorKin Chan, W
 
dc.contributor.authorWai Keung Fong, P
 
dc.contributor.authorFei Lui, H
 
dc.contributor.authorSurya, C
 
dc.date.accessioned2011-12-21T08:47:56Z
 
dc.date.available2011-12-21T08:47:56Z
 
dc.date.issued2011
 
dc.description.abstractZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3653835
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3653835
 
dc.identifier.hkuros198039
 
dc.identifier.isiWOS:000297062100123
Funding AgencyGrant Number
University of Hong Kong
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant, (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund Grant No. ITS/129/08 is acknowledged.

 
dc.identifier.issn0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
dc.identifier.issue9
 
dc.identifier.scopuseid_2-s2.0-81355142776
 
dc.identifier.urihttp://hdl.handle.net/10722/143737
 
dc.identifier.volume110
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 094513) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p094513_s1).
 
dc.subjectCathodoluminescence spectroscopy
 
dc.subjectIdentical conditions
 
dc.subjectLuminescence peak
 
dc.subjectReverse bias
 
dc.subjectThin-film structure
 
dc.titleZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Chen, X</contributor.author>
<contributor.author>Man Ching Ng, A</contributor.author>
<contributor.author>Fang, F</contributor.author>
<contributor.author>Hang Ng, Y</contributor.author>
<contributor.author>Djuri&#353;i&#263;, AB</contributor.author>
<contributor.author>Lam Tam, H</contributor.author>
<contributor.author>Wai Cheah, K</contributor.author>
<contributor.author>Gwo, S</contributor.author>
<contributor.author>Kin Chan, W</contributor.author>
<contributor.author>Wai Keung Fong, P</contributor.author>
<contributor.author>Fei Lui, H</contributor.author>
<contributor.author>Surya, C</contributor.author>
<date.accessioned>2011-12-21T08:47:56Z</date.accessioned>
<date.available>2011-12-21T08:47:56Z</date.available>
<date.issued>2011</date.issued>
<identifier.citation>Journal Of Applied Physics, 2011, v. 110 n. 9</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/143737</identifier.uri>
<description.abstract>ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l&apos;&#233;clairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. &#169; 2011 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<rights>Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 094513) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p094513_s1).</rights>
<subject>Cathodoluminescence spectroscopy</subject>
<subject>Identical conditions</subject>
<subject>Luminescence peak</subject>
<subject>Reverse bias</subject>
<subject>Thin-film structure</subject>
<title>ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias</title>
<type>Article</type>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.3653835</identifier.doi>
<identifier.scopus>eid_2-s2.0-81355142776</identifier.scopus>
<identifier.hkuros>198039</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-81355142776&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>110</identifier.volume>
<identifier.issue>9</identifier.issue>
<identifier.isi>WOS:000297062100123</identifier.isi>
<publisher.place>United States</publisher.place>
<relation.project>Light Emitting Diodes Fabricated by Electrochemical Methods</relation.project>
<bitstream.url>http://hub.hku.hk/bitstream/10722/143737/1/content.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. University of Science and Technology of China
  3. Hong Kong Baptist University
  4. Hong Kong Polytechnic University
  5. National Tsing Hua University