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Article: ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

TitleZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias
Authors
KeywordsCathodoluminescence spectroscopy
Identical conditions
Luminescence peak
Reverse bias
Thin-film structure
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 9 How to Cite?
AbstractZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143737
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
University of Hong Kong
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant, (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund Grant No. ITS/129/08 is acknowledged.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorChen, Xen_HK
dc.contributor.authorMan Ching Ng, Aen_HK
dc.contributor.authorFang, Fen_HK
dc.contributor.authorHang Ng, Yen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLam Tam, Hen_HK
dc.contributor.authorWai Cheah, Ken_HK
dc.contributor.authorGwo, Sen_HK
dc.contributor.authorKin Chan, Wen_HK
dc.contributor.authorWai Keung Fong, Pen_HK
dc.contributor.authorFei Lui, Hen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-12-21T08:47:56Z-
dc.date.available2011-12-21T08:47:56Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143737-
dc.description.abstractZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 094513) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p094513_s1).en_US
dc.subjectCathodoluminescence spectroscopy-
dc.subjectIdentical conditions-
dc.subjectLuminescence peak-
dc.subjectReverse bias-
dc.subjectThin-film structure-
dc.titleZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward biasen_HK
dc.typeArticleen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3653835en_HK
dc.identifier.scopuseid_2-s2.0-81355142776en_HK
dc.identifier.hkuros198039en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81355142776&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000297062100123-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridChen, X=35274291400en_HK
dc.identifier.scopusauthoridMan Ching Ng, A=54416128400en_HK
dc.identifier.scopusauthoridFang, F=7202929817en_HK
dc.identifier.scopusauthoridHang Ng, Y=54395508700en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLam Tam, H=35317851500en_HK
dc.identifier.scopusauthoridWai Cheah, K=6505680733en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK
dc.identifier.scopusauthoridKin Chan, W=54395382700en_HK
dc.identifier.scopusauthoridWai Keung Fong, P=54396426100en_HK
dc.identifier.scopusauthoridFei Lui, H=54395303900en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK

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